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arXiv 2302.08375cond-mat.mtrl-sci
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单层WSe2中暗激子能量劈裂:含时密度泛函理论的见解

Dark exciton energy splitting in monolayer WSe2: insights from time-dependent density-functional theory

Jia Shi, Volodymyr Turkowski, Duy Le, Talat S. Rahman

AI总结:

本文提出基于TDDFT的形式体系,研究单层WSe2中暗激子的能量劈裂,发现交换作用主导劈裂,暗激子因杂化变亮,并计算了温度对带隙和线宽的影响。

摘要:

我们在此提出一种基于含时密度泛函理论(TDDFT)的形式体系,用于描述半导体中谷内和谷间激子的特性,其中后者此前一直是一个挑战。通过使用适当的交换关联核(nanoquanta),我们将单层(1L)WSe2中谷内和谷间暗激子之间的能量差异归因于这些态的交换关联能量中交换部分的支配作用。此外,我们计算的跃迁贡献图确立了亮激子和暗激子中电子-空穴激发的动量分辨权重,从而提供了对1L WSe2激子性质的全面理解。我们发现这些态由相应谷周围的杂化激发组成,这导致暗激子变亮,即显著缩短了它们的寿命,这反映在光致发光(PL)光谱中。利用多体微扰理论,我们计算了声子对能带隙的贡献以及激发电子、空穴和(亮)激子的线宽,发现随着温度升高,带隙显著减小,而线宽增大。我们的工作为在从头算框架内描述过渡金属二硫属化物的超快电荷动力学铺平了道路。

英文摘要:

We present here a formalism based on time-dependent density-functional theory (TDDFT) to describe characteristics of both intra- and inter-valley excitons in semiconductors, the latter of which had remained a challenge. Through the usage of an appropriate exchange-correlation kernel (nanoquanta), we trace the energy difference between the intra- and inter-valley dark excitons in monolayer (1L) WSe2 to the domination of the exchange part in the exchange-correlation energies of these states. Furthermore, our calculated transition contribution maps establish the momentum resolved weights of the electron-hole excitations in both bright and dark excitons thereby providing a comprehensive understanding of excitonic properties of 1L WSe2. We find that the states consist of hybridized excitations around the corresponding valleys which leads to brightening of the dark excitons, i.e., significantly decreasing their lifetime which is reflected in the PL spectrum. Using many-body perturbation theory, we calculate the phonon contribution to the energy bandgap and the linewidths of the excited electrons, holes and (bright) exciton to find that as the temperature increases the bandgap significantly decreases, while the linewidths increase. Our work paves for describing the ultrafast charge dynamics of transition metal dichalcogenide within an ab initio framework.

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