压力传感器芯片采用新型电路，适用于10 kPa量程
Pressure Sensor Chip with New Electrical Circuit for 10 kPa Range
摘要：
介绍了一种采用新型电路的10 kPa高灵敏度MEMS压力传感器芯片的特性。电路采用基于双极结型晶体管（BJT）的负反馈压敏差分放大器（PDA-NFL）。BJT具有形成在不可变形芯片区域上的n-p-n型（V-NPN）的垂直结构。该电路包含八个压敏电阻器，位于最大机械应力区域的异形膜上。实验结果表明，芯片面积为4.0 × 4.0 mm 2的PDA-NFL压力传感器芯片具有灵敏度S = 7.8，12.4 mV/V/kPa，非线性2KNL = 0.14. 0.38%/FS（从压力传感器芯片的背面施加压力）。
英文摘要：
Characteristics of high sensitivity MEMS pressure sensor chip for 10 kPa utilizing a novel electrical circuit are presented. The electrical circuit uses piezosensitive differential amplifier with negative feedback loop (PDA-NFL) based on two bipolar-junction transistors (BJT). The BJT has a vertical structure of n-p-n type (V-NPN) formed on a non-deformable chip area. The circuit contains eight piezoresistors located on a profiled membrane in the areas of maximum mechanical stresses. The experimental results prove that pressure sensor chip PDA-NFL with 4.0x4.0 mm2 chip area has sensitivity S = 7.8...12.4 mV/V/kPa with nonlinearity of 2KNL = 0.14...0.38 %/FS (pressure is applied from the back side of pressure sensor chip).
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