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arXiv 2302.04372cond-mat.str-elcond-mat.mtrl-sci
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Mott-Hubbard关联金属中的带宽控制与对称性破缺

Bandwidth Control and Symmetry Breaking in a Mott-Hubbard Correlated Metal

Lishai Shoham, Maria Baskin, Tom Tiwald, Guy Ankonina, Myung-Geun Han, Anna Zakharova, Shaked Caspi, Shay Joseph, Yimei Zhu, Isao H. Inoue, Cinthia Piamonteze, … 展开作者

Lishai Shoham, Maria Baskin, Tom Tiwald, Guy Ankonina, Myung-Geun Han, Anna Zakharova, Shaked Caspi, Shay Joseph, Yimei Zhu, Isao H. Inoue, Cinthia Piamonteze, Marcelo J. Rozenberg, Lior Kornblum

AI总结:

本研究通过皮米级晶格工程调控轨道重叠,实现对Mott-Hubbard关联金属SrVO3中电子关联强度的控制,并揭示带宽控制与对称性破缺对电子结构的主导作用,为新型电子器件奠定基础。

摘要:

在Mott材料中,强电子关联会产生一系列复杂的电子结构。近期合成技术的进步为实现利用Mott物理设计变革性器件提供了现实机遇。然而,实现此类器件的一个主要瓶颈仍然是对电子关联强度的缺乏控制。这源于电子结构的复杂性,其往往掩盖了关联强度背后的基本机制。在此,我们通过使用皮米级晶格工程调控轨道重叠程度,展示了对关联强度的控制。我们阐明了带宽控制和同步对称性破缺如何能够主导关联$SrVO_3$模型系统的电子结构。我们展示了拉伸和压缩双轴应变如何相反地影响$SrVO_3$的面内和面外轨道占据,导致轨道简并的部分解除。我们推导并解释了应变下的谱权重重新分布,并阐明了高拉伸应变如何驱动系统向Mott绝缘态转变。此类概念的实施将推动关联电子现象更接近新型固态器件和电路。因此,这些发现为理解和控制广泛功能材料中的电子关联铺平了道路,推动这一用于新型电子学的强大资源更接近实际实现。

英文摘要:

In Mott materials strong electron correlation yields a spectrum of complex electronic structures. Recent synthesis advancements open realistic opportunities for harnessing Mott physics to design transformative devices. However, a major bottleneck in realizing such devices remains the lack of control over the electron correlation strength. This stems from the complexity of the electronic structure, which often veils the basic mechanisms underlying the correlation strength. Here, we present control of the correlation strength by tuning the degree of orbital overlap using picometer-scale lattice engineering. We illustrate how bandwidth control and concurrent symmetry breaking can govern the electronic structure of a correlated $SrVO_3$ model system. We show how tensile and compressive biaxial strain oppositely affect the $SrVO_3$ in-plane and out-of-plane orbital occupancy, resulting in the partial alleviation of the orbital degeneracy. We derive and explain the spectral weight redistribution under strain and illustrate how high tensile strain drives the system towards a Mott insulating state. Implementation of such concepts will drive correlated electron phenomena closer towards new solid state devices and circuits. These findings therefore pave the way for understanding and controlling electron correlation in a broad range of functional materials, driving this powerful resource for novel electronics closer towards practical realization.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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