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arXiv 2301.04873physics.chem-ph
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模拟表面振动及其在分子吸附中的作用:一种广义朗之万方法

Modeling surface vibrations and their role in molecular adsorption: a generalized Langevin approach

Ardavan Farahvash, Mayank Agarwal, Andrew Peterson, Adam P. Willard

AI总结:

本文提出一种基于广义朗之万方程的方法,从原子模拟数据推导参数以描述表面声子集体运动,揭示了记忆核的双峰形式及其受声子限域效应影响,并量化了其对粘附系数的作用。

摘要:

固体表面的原子振动在表面结合分子的反应及其吸附与脱附过程中可能发挥重要作用。相关的声子模式可以涉及跨越广泛长度尺度的原子集体运动。在本文中,我们展示了如何利用广义朗之万方程来描述这些集体运动,并根据它们与单个位点的耦合进行加权。我们的方法建立在Tully等人最初提出的广义朗之万振子(GLO)模型基础之上。我们通过从原子模拟数据中推导参数来扩展GLO模型。我们应用该方法研究了一个模型铂表面的记忆核,并证明由于同时耦合到低能声学模式以及接近德拜频率的高能模式,记忆核具有双峰形式。在具有不同元素组成、表面结构和溶剂化状态的多种固体中均观察到相同的双峰形式。通过研究这些主导模式对模拟尺寸的依赖性,我们认为声学模式在宏观晶格极限下被冻结。通过模拟不同尺寸的周期性重复平板,我们量化了记忆核中声子限域效应的影响及其对模拟的粘附系数的伴随影响。

英文摘要:

The atomic vibrations of a solid surface can play a significant role in the reactions of surface-bound molecules, as well as their adsorption and desorption. Relevant phonon modes can involve the collective motion of atoms over a wide array of length scales. In this manuscript, we demonstrate how the generalized Langevin equation can be utilized to describe these collective motions weighted by their coupling to individual sites. Our approach builds upon the generalized Langevin oscillator (GLO) model originally developed by Tully \textit{et al.} We extend the GLO by deriving parameters from atomistic simulation data. We apply this approach to study the memory kernel of a model platinum surface and demonstrate that the memory kernel has a bimodal form due to coupling to both low-energy acoustic modes and high-energy modes near the Debye frequency. The same bimodal form was observed across a wide variety of solids of different elemental compositions, surface structures, and solvation states. By studying how these dominant modes depend on simulation size, we argue that the acoustic modes are frozen in the limit of macroscopic lattices. By simulating periodically replicated slabs of various sizes we quantify the influence of phonon confinement effects in the memory kernel and their concomitant effect on simulated sticking coefficients.

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