用于透明超导电子学的还原 ITO
Reduced ITO for Transparent Superconducting Electronics
AI总结：
针对超导材料吸光限制光电集成的问题，本文研究还原 ITO 作为透明超导体，制备并表征其超导导线，证明 10 nm 薄膜在 500–1700 nm 仅吸收约 1–20% 的光。
摘要：
超导电子学中的光吸收是限制将光学元件与超导元件集成的电路架构质量的主要因素。像铌这样的典型超导材料，其 10 nm 厚薄膜可吸收入射光辐射的一半以上。我们转而提出使用对系统中其他位置所用波长透明的超导体。本文研究了还原氧化铟锡（ITO）作为电子学中潜在透明超导体的可能性。我们制备并表征了还原氧化铟锡超导导线。结果还表明，该材料的 10 nm 厚薄膜在 500–1700 nm 波长范围内仅吸收约 1–20% 的光。
英文摘要：
Absorption of light in superconducting electronics is a major limitation on the quality of circuit architectures that integrate optical components with superconducting components. A 10 nm thick film of a typical superconducting material like niobium can absorb over half of any incident optical radiation. We propose instead using superconductors which are transparent to the wavelengths used elsewhere in the system. In this paper we investigated reduced indium tin oxide (ITO) as a potential transparent superconductor for electronics. We fabricated and characterized superconducting wires of reduced indium tin oxide. We also showed that a $\SI{10}{nm}$ thick film of the material would only absorb about 1 - 20\% of light between 500 - 1700 nm.
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