拓扑绝缘体中由自旋-动量锁定非均匀性引起的双线性平面霍尔效应
Bilinear planar Hall effect in topological insulators due to spin-momentum locking inhomogeneity
AI总结：
本文通过半经典玻尔兹曼方法研究拓扑绝缘体中自旋-动量锁定非均匀性对平面霍尔效应的影响，发现并解释了由该非均匀性诱导的、在电流或磁场方向反转时变号的双线性非线性平面霍尔效应，且该效应在传统平面霍尔效应中占主导。
摘要：
我们研究了自旋-动量锁定非均匀性对拓扑绝缘体（TIs）中平面霍尔效应的影响。利用描述三维拓扑绝缘体表面态的最小模型和半经典玻尔兹曼形式体系，我们在广义弛豫时间近似下推导了平面霍尔电导率。我们发现总的平面霍尔电导率是外电场线性分量和非线性分量之和。线性项是传统的平面霍尔电导率，其随外磁场呈二次方标度，而非线性项则表现出双线性行为，即当电荷电流密度或面内磁场方向反转时，其符号发生改变。我们证明了这一涌现的非线性平面霍尔效应是具有各向同性能量色散的拓扑绝缘体中自旋-动量锁定非均匀性的结果，并在传统平面霍尔效应之上占据主导地位。
英文摘要：
We study the effect of spin-momentum locking inhomogeneity on the planar Hall effect in topological insulators (TIs). Using the minimal model describing surface states of 3D TIs and semiclassical Boltzmann formalism, we have derived the planar Hall conductivity within the generalized relaxation time approximation. We have found that the total planar Hall conductivity is a sum of linear and nonlinear to the external electric field components. The linear term is a conventional planar Hall conductivity which scales quadratically with an external magnetic field, whereas the nonlinear term reveals bilinear behaviour, i.e., changes its sign when either charge current density or in-plane magnetic field orientation is reversed. We have shown that the emergent nonlinear planar Hall effect is a consequence of spin-momentum locking inhomogeneity in the TIs with isotropic energy dispersion and dominates under the conventional planar Hall effect.
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