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arXiv 2212.03367quant-phphysics.atom-ph
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强磁场下囚禁离子多量子比特门中自发辐射的比较

Comparison of Spontaneous Emission in Trapped Ion Multiqubit Gates at High Magnetic Fields

Allison L. Carter, Sean R. Muleady, Athreya Shankar, Jennifer F. Lilieholm, Bryce B. Bullock, Matthew Affolter, Ana Maria Rey, John J. Bollinger

AI总结:

该研究理论分析强磁场下囚禁离子的光移门与莫尔默-索伦森门的自发辐射退相干,对比不同参数下的性能,给出最优条件与磁场依赖关系,并探讨可媲美现有水平的替代构型。

摘要:

彭宁阱(Penning trap)已被用于实现包含数百个离子的量子模拟与传感,且因具备在二维和三维晶体中囚禁并操控多达数千个离子的能力,为囚禁离子量子平台的规模化发展提供了极具前景的路径。在基于激光的囚禁离子多量子比特操作中,失谐自发辐射是导致退相干的主要来源。许多囚禁离子量子计算机或模拟器采用时钟量子比特,而其他系统则依赖塞曼量子比特,后者对这种退相干的计算更为复杂。\n我们从理论上研究了强磁场下囚禁离子量子门中自发辐射的影响,考察了两类量子门——光移门(light-shift gate)和莫尔默-索伦森门(Molmer-Sorensen gate),并对比了二者的退相干误差。我们还比较了驱动量子门所用激光束的不同失谐量、偏振态以及所需强度。研究表明,两类量子门在各自的最优工作条件下可达到相近的性能,我们同时分析了多种工作点的实验可行性。\n通过研究每类量子门的磁场依赖关系,我们证明当P态精细结构劈裂远大于塞曼劈裂时,莫尔默-索伦森门的理论性能显著优于光移门。此外,针对光移门,我们近似比较了强磁场下可达到的保真度与当前最先进的两比特囚禁离子量子门的保真度。结果显示,就自发辐射而言,我们当前构型可达到的不忠度比最优的低场量子门高约一个数量级,但我们也讨论了其他替代构型,其潜在错误率可与最先进的囚禁离子量子门相当。

英文摘要:

Penning traps have been used for performing quantum simulations and sensing with hundreds of ions and provide a promising route toward scaling up trapped ion quantum platforms because of the ability to trap and control up to thousands of ions in 2D and 3D crystals. A leading source of decoherence in laser-based multiqubit operations on trapped ions is off-resonant spontaneous emission. While many trapped ion quantum computers or simulators utilize clock qubits, other systems rely on Zeeman qubits, which require a more complex calculation of this decoherence. We examine theoretically the impacts of spontaneous emission on quantum gates performed with trapped ions in a high magnetic field. We consider two types of gates -- light-shift and Molmer-Sorensen gates -- and compare the decoherence errors in each. We also compare different detunings, polarizations, and required intensities of the laser beams used to drive the gates. We show that both gates can have similar performance at their optimal operating conditions and examine the experimental feasibility of various operating points. By examining the magnetic field dependence of each gate, we demonstrate that when the $P$ state fine structure splitting is large compared to the Zeeman splittings, the theoretical performance of the Molmer-Sorensen gate is significantly better than that of the light-shift gate. Additionally, for the light-shift gate, we make an approximate comparison between the fidelities that can be achieved at high fields with the fidelities of state-of-the-art two-qubit trapped ion quantum gates. We show that, with regard to spontaneous emission, the achievable infidelity of our current configuration is about an order of magnitude larger than that of the best low-field gates, but we also discuss alternative configurations with potential error rates that are comparable with state-of-the-art trapped ion gates.

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