基于低温SRAM的14 nm任意波形generator的自旋量子位控制
A cryogenic SRAM based arbitrary waveform generator in 14 nm for spin qubit control
摘要：
量子比特门序列的实现需要具有可编程幅度、持续时间、间隔和相位的相干微波控制脉冲。提出了一种基于SRAM的自旋量子比特低温控制任意波形发生器。在这项工作中，我们证明了一个完全可编程的射频任意波形发生器在14纳米FinFET技术的低温操作。来自控制处理器的波形序列可以存储在SRAM存储器阵列中，该SRAM存储器阵列可以被实时编程。波形模式通过源串联端接的数模转换器转换为微波脉冲。该芯片在4K下工作，能够在所需的载波频率下生成任意包络形状。AWG的总功耗为40 - 140mW，在4 K，取决于波特率。在4 K下测量到1 - 17 GHz的宽信号频带，而使用频分复用可以在40 dB的平均无杂散动态范围内实现多量子比特控制。这项工作为最佳量子位控制和闭环反馈控制铺平了道路，这是实现低延迟错误缓解所必需的
英文摘要：
Realization of qubit gate sequences require coherent microwave control pulses with programmable amplitude, duration, spacing and phase. We propose an SRAM based arbitrary waveform generator for cryogenic control of spin qubits. We demonstrate in this work, the cryogenic operation of a fully programmable radio frequency arbitrary waveform generator in 14 nm FinFET technology. The waveform sequence from a control processor can be stored in an SRAM memory array, which can be programmed in real time. The waveform pattern is converted to microwave pulses by a source-series-terminated digital to analog converter. The chip is operational at 4 K, capable of generating an arbitrary envelope shape at the desired carrier frequency. Total power consumption of the AWG is 40-140mW at 4 K, depending upon the baud rate. A wide signal band of 1-17 GHz is measured at 4 K, while multiple qubit control can be achieved using frequency division multiplexing at an average spurious free dynamic range of 40 dB. This work paves the way to optimal qubit control and closed loop feedback control, which is necessary to achieve low latency error mitigation
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