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arXiv 2210.07656cond-mat.str-el
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SmNiO $_3$中伴随层间电荷有序的氢致金属-绝缘体转变

Hydrogen-Induced Metal-Insulator Transition Accompanied by Inter-Layer Charge Ordering in SmNiO$_3$

Kunihiko Yamauchi, Ikutaro Hamada

摘要:

采用Hubbard U修正的密度泛函理论,阐明了SmNiO $_3$中氢致金属-绝缘体相变的微观机制.虽然每个Ni原子100%的氢掺杂被认为是金属-绝缘体转变的原因,但我们发现,50%的氢掺杂导致显示绝缘性质的非常稳定的原子结构。稳定的晶体结构显示出Ni $^{2+}$和Ni $^{3+}$价态的电荷分离的特殊层状模式以及引起eg轨道态分裂和打开带隙的强Jahn-Teller畸变。

英文摘要:

The microscopic mechanism of the hydrogen-induced metal-insulator transition in SmNiO$_3$ is clarified by means of density-functional theory with the Hubbard U correction. While 100% of hydrogen doping per Ni atom has been supposed to be responsible for the metal-insulator transition, we found that 50% of hydrogen doping results in an outstandingly stable atomic structure showing the insulating property. The stable crystal structure shows the peculiar layered pattern of charge disproportionation of Ni$^{2+}$ and Ni$^{3+}$ valences together with the strong Jahn-Teller distortion that causes the eg orbital state splitting and opens the band gap.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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