arXiv 2209.097972022-09cond-mat.mtrl-sci

电解液门控法调谐$\rm{CoFe_2O_4}$衬底上Pt_（3+）薄膜的反常霍尔效应

Tuning the hysteresis loop for the anomalous Hall effect in Pt ultrathin films on $\rm{CoFe_2O_4}$ by electrolyte gating

Leon Sakakibara, Yumiko Katayama, Tomohiro Koyama, Daichi Chiba, Kazunori Ueno

备注：: 16 pages, 7 figures

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摘要：

铁磁绝缘体上的Pt纳米薄膜在自旋电子学应用中得到了广泛的研究，由于磁邻近效应（MPE），界面Pt原子的磁矩被认为是铁磁有序的。异常霍尔效应（AHE）通常用于检查Pt层的面外磁矩。为了调节Pt薄膜的铁磁特性，我们在$\rm{CoFe_2O_4}$（CFO）铁磁绝缘体上制备了厚度为5.9 nm和7.0 nm的Pt薄膜上的双电层晶体管。对于Pt（7.0 nm）/CFO样品，在没有栅极偏压的情况下，在异常霍尔电阻率中观察到磁滞回线，并且通过施加栅极偏压来调谐矫顽场。对于Pt（5.9 nm）/CFO样品，在没有栅极偏压的情况下没有观察到磁滞回线，但是通过施加栅极偏压（$V\rm{_G} =$ $\pm$ 3 V）打开了磁滞回线。这表明Pt膜中的磁矩的长程铁磁有序通过电场效应被打开和关闭。对于+3 V的$V\rm{_G}$，在高达19.5 K时观察到滞后回线，而在高达约室温时观察到AHE。

英文摘要：

Pt ultrathin films on ferromagnetic insulators have been widely studied for spintronics applications, and magnetic moments of interface Pt atoms were considered to be ferromagnetically ordered due to a magnetic proximity effect (MPE). An anomalous Hall effect (AHE) is usually used to examine an out-of-plane magnetic moments of the Pt layer. To tune ferromagnetic properties of an Pt ultrathin film, we fabricated electric double layer transistors on Pt thin films with thicknesses of 5.9 nm and 7.0 nm on a $\rm{CoFe_2O_4}$ (CFO) ferrimagnetic insulator. For the Pt (7.0 nm)/CFO sample, a hysteresis loop was observed in the anomalous Hall resistivity without the gate bias, and the coercive field was tuned by applying the gate bias. For the Pt (5.9 nm)/CFO sample, a hysteresis loop was not observed without a gate bias, but was opened by applying a gate bias ($V\rm{_G} =$ $\pm$3 V). This indicated that the long-range ferromagnetic ordering of magnetic moments in the Pt film was switched on and off by the electric field effect. The hysteresis loop was observed up to 19.5 K for a $V\rm{_G}$ of +3 V, while the AHE was observed up to approximately room temperature.

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