平衡时1 $T$ $_2$中金属镶嵌相的观察
Observation of the metallic mosaic phase in 1$T$-TaS$_2$ at equilibrium
摘要：
过渡金属二硫属化物二硫化钽（1 $T$）在低于165 K的温度下具有相称的电荷密度波（CCDW），在该温度下它也变得绝缘。低温CCDW相可以通过激光或电压脉冲驱动成亚稳的“马赛克”相，其显示出大密度的CDW畴壁以及电子带隙的闭合。这种脉冲诱导金属镶嵌的确切起源尚未完全了解。在这里，使用扫描隧道显微镜和光谱（STM/STS），我们观察到发生这样的金属镶嵌相的表面上的TaS $_2$没有事先脉冲激发超过连续面积大于$100 \times 100$ ~nm $^2$和宏观领域的毫米级。我们属性的马赛克相的外观的存在下，导致形成的特征致密畴壁网络的表面缺陷。基于我们的STM测量，我们进一步讨论了如何在镶嵌相的金属行为的外观可以解释的顶层的局部堆叠差异。因此，我们提供了一个潜在的途径来解释脉冲诱导镶嵌相的起源。
英文摘要：
The transition-metal dichalcogenide tantalum disulphide (1$T$-TaS$_2$) hosts a commensurate charge density wave (CCDW) at temperatures below 165~K where it also becomes insulating. The low temperature CCDW phase can be driven into a metastable "mosaic" phase by means of either laser or voltage pulses which shows a large density of CDW domain walls as well as a closing of the electronic band gap. The exact origins of this pulse-induced metallic mosaic are not yet fully understood. Here, using scanning tunneling microscopy and spectroscopy (STM/STS), we observe the occurrence of such a metallic mosaic phase on the surface of TaS$_2$ without prior pulse excitation over continuous areas larger than $100 \times 100$~nm$^2$ and macroscopic areas on the millimetre scale. We attribute the appearance of the mosaic phase to the presence of surface defects which cause the formation of the characteristic dense domain wall network. Based on our STM measurements, we further argue how the appearance of the metallic behaviour in the mosaic phase could be explained by local stacking differences of the top layer. Thus, we provide a potential avenue to explain the origin of the pulse induced mosaic phase.
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