在1 T- TaSe $_2$中验证本体金属和表面绝缘状态
Reconcile the Bulk Metallic and Surface Insulating state in 1T-TaSe$_2$
摘要：
过渡金属二硫属化合物1 T-TaS $_2$和1 T-TaSe $_2$由于具有复杂的相关电子性质而得到了广泛的研究。不同表面电子态的起源仍然存在争议。我们应用扫描隧道显微镜和光谱学对1 T-TaSe体材料$_2$的表面电子态进行了重新研究。在同一样品的不同区域中识别绝缘和金属状态。绝缘状态与1 T-TaS $_2$中的绝缘状态相似，包括dI/dV谱和轨道织构。通过对单台阶区的进一步研究，发现电子态的差异与不同的堆积顺序有关。绝缘状态最有可能是单层性质，在某些特定的堆叠顺序中调制为金属状态。在1 T-TaSe $_2$中，金属和大能隙绝缘谱以及它们相应的堆垛阶都占主导地位。连接的金属区域导致金属输运行为。然后，我们调和块体金属和表面绝缘状态的1 T-TaSe $_2$。1 T-TaSe $_2$中的丰富现象加深了我们对1 T-TaSe $_2$和1 T-TaS $_2$中相关电子态的理解。
英文摘要：
The transition metal dichalcogenides 1T-TaS$_2$ and 1T-TaSe$_2$ have been extensively studied for the complicated correlated electronic properties. The origin of different surface electronic states remains controversial. We apply scanning tunneling microscopy and spectroscopy to restudy the surface electronic state of bulk 1T-TaSe$_2$. Both insulating and metallic states are identified in different areas of the same sample. The insulating state is similar to that in 1T-TaS$_2$, concerning both the dI/dV spectrum and the orbital texture. With further investigations in single-step areas, the discrepancy of electronic states is found to be associated with different stacking orders. The insulating state is most possibly a single-layer property, modulated to a metallic state in some particular stacking orders. Both the metallic and large-gap insulating spectra, together with their corresponding stacking orders, are dominant in 1T-TaSe$_2$. The connected metallic areas lead to the metallic transport behavior. We then reconcile the bulk metallic and surface insulating state in 1T-TaSe$_2$. The rich phenomena in 1T-TaSe$_2$ deepen our understanding of the correlated electronic state in bulk 1T-TaSe$_2$ and 1T-TaS$_2$.
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