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arXiv 2208.03032cond-mat.mes-hall
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二维电子流体Poillille流中的霍尔效应

Hall effect in Poiseuille flow of two-dimensional electron fluid

A. N. Afanasiev, P. S. Alekseev, A. A. Danilenko, A. P. Dmitriev, A. A. Greshnov, M. A. Semina

摘要:

最近在高质量导体中实现了电荷输运的流体动力学机制。在流体动力学和欧姆状态下,长样品的霍尔电阻的主要部分由作用于传导电子的洛伦兹力和电力之间的平衡决定。实验观察到的流体动力学样品中霍尔电阻与这种“标准"值的偏差通常与纳维-斯托克斯方程中的霍尔粘度项有关。本文从理论上研究了二维电子流体Poietille流中的霍尔效应。我们表明,近边缘的半弹道层的宽度的顺序的粒子间的平均自由程,这不可避免地出现在样品边缘附近,霍尔电阻的贡献,这是可比的霍尔粘度的散装贡献。这样,用通常的接触技术测量流体力学样品的霍尔电阻与“标准”霍尔电阻的偏差,应与体中的霍尔粘度和近边缘层中的半弹道效应有关

英文摘要:

The hydrodynamic regime of charge transport has been recently realized in high-quality conductors. In the hydrodynamic as well as in the Ohmic regimes the main part of the Hall resistance of a long sample is determined by the balance between the Lorentz force and the electric force, acting on conduction electrons. Experimentally observed deviations of the Hall resistance in hydrodynamic samples from such the ''standard'' value are usually associated with the Hall viscosity term in the Navier-Stokes equation. In this work we theoretically study the Hall effect in a Poiseuille flow of a two-dimensional electron fluid. We show that the near-edge semiballistic layers with the width of the order of the inter-particle mean free path, which inevitably appear near sample edges, give the contribution to the Hall resistance which is comparable with the bulk contribution from the Hall viscosity. In this way, the measured deviations of the Hall resistance from the ''standard'' one in hydrodynamic samples by the usual contact techniques should be associated with both the Hall viscosity in the bulk and the semiballistic effects in the near-edge layers

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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