Graphene can be turned into a semimetal with broken time-reversal symmetry by adding a valley-dependent pseudo-scalar potential that shifts the Dirac point energies in opposite directions, as in the modified Haldane model. We consider a bilayer obtained by stacking two time-reversed copies of the modified Haldane model, where conduction and valence bands cross to give rise to a nodal line in each valleys. In the AB stacking, the interlayer hopping lifts the degeneracy of the nodal lines and induces a band repulsion, leading surprisingly to a chiral insulator with a Chern number $C=\pm2$. As a consequence a pair of chiral edge states appears at the boundaries of the ribbon bilayer geometry. In contrast, the AA stacking does not show nontrivial topological phases. We discuss possible experimental implementations of our results.
We derive a general relation between the stacking vector ${\bf u}$ describing the relative shift of two layers of bilayer graphene and the Chern index. We find $C = ν- \text{sign}\left(|V_{AB}|-|V_{BA}|\right)$, where $ν$ is a valley index and $|V_{αβ}|$ the absolute value of stacking potentials that depend on ${\bf u}$ and that uniquely determine the interlayer interaction; AA stacking plays no role in the topological character. With this expression we show that while ideal and relaxed minimally twisted bilayer graphene appear so distinct as to be almost different materials, their Chern index…
We introduce a simple method to realize and detect photonic topological Chern insulators with one-dimensional circiut quantum electrodynamics arrays. By periodically modulating the couplings of the array, we show that this one-dimensional model can be mapped into a two-dimensional Chern insulator model. In addition to allowing the study of photonic Chern insulators, this approach also provides a natural platform to realise experimentally Laughlin's pumping argument. Based on scattering theory of topological insulators and input-output formalism, we show that the photonic edge state can be prob…
We theoretically predict that the Casimir force in vacuum between two Chern insulator plates can be repulsive (attractive) at long distances whenever the sign of the Chern numbers characterizing the two plates are opposite (equal). A unique feature of this system is that the sign of the force can be tuned simply by turning over one of the plates or alternatively by electrostatic doping. We calculate and take into account the full optical response of the plates and argue that such repulsion is a general phenomena for these systems as it relies on the quantized zero frequency Hall conductivity. …
A non-Hermitian extension of a Chern insulator and its bulk-boundary correspondence are investigated. It is shown that in addition to the robust chiral edge states that reflect the nontrivial topology of the bulk (nonzero Chern number), anomalous helical edge states localized only at one edge can appear, which are unique to the non-Hermitian Chern insulator.
Topological insulators are a novel state of matter that share a common feature: their spectral bands are associated with a nonlocal integer-valued index, commonly manifesting through quantized bulk phenomena and robust boundary effects. In this work, we demonstrate using dimensional reduction that high-order topological insulators are descendants from a chiral semimetal in higher dimensions. Specifically, we analyze the descendants of an ancestor four-dimensional Chern insulator in the limit where it becomes chiral and show their relation to two-dimensional second-order topological insulators.…
Lattice defects such as stacking faults may obscure electronic topological features of real materials. In fact, defects are a source of disorder that can enhance the density of states and conductivity of the bulk of the system and they break crystal symmetries that can protect the topological states. On the other hand, in recent years it has been shown that lattice defects can act as a source of nontrivial topology. Motivated by recent experiments on three-dimensional (3D) topological systems such as Bi$_2$TeI and Bi$_{14}$Rh$_3$I$_9$, we examine the effect of stacking faults on the electronic…
Two-dimensional 2-bands insulators breaking time reversal symmetry can present topological phases indexed by a topological invariant called the Chern number. Here we first propose an efficient procedure to determine this topological index. This tool allows in principle to conceive 2-bands Hamiltonians with arbitrary Chern numbers. We apply our methodology to gradually construct a quantum anomalous Hall insulator (Chern insulator) which can be tuned through five topological phases indexed by the Chern numbers {0,+/-1,+/-2}. On a cylindrical finite geometry, such insulator can therefore sustain …
The effect of a magnetic field on a two-dimensional Chern band insulator is discussed. It is shown that, unlike the trivial insulator, an anomalous Hall insulator with Chern number $C$ becomes a metal when a magnetic field is applied at constant particle density, for any $C>0$. For a time reversal invariant topological insulator with a spin Chern resolved number, $C_\uparrow= - C_\downarrow=C$, the magnetic field induces a spin polarized spin Hall insulator. We consider also the effect of a superlattice potential and extend previous results for the quantization of the Hall conductance of fille…
Chern insulator or quantum anomalous Hall state is a topological state with integer Hall conductivity but in absence of Landau level. It had been well established on various two-dimensional lattices with periodic structure. Here, we report similar Chern insulators can also be realized on the quasicrystal with $5$-fold rotational symmetry. Providing the staggered flux through plaquettes, we propose two types of quasicrystalline Chern insulators. Their topological characterizations are well identified by the robustness of edge states, non-zero real-space Chern number, and quantized conductance. …
We propose characterization of the three-dimensional topological insulator by using the Chern number for the entanglement Hamiltonian (entanglement Chern number). Here we take the extensive spin partition of the system, that pulls out the quantum entanglement between up spin and down spin of the many-body ground state. In three dimensions, the topological insulator phase is described by the section entanglement Chern number, which is the entanglement Chern number for a periodic plane in the Brillouin zone. The section entanglement Chern number serves as an interpolation of the $Z_2$ invariants…
A family of semiconductors called as Chern band insulator are shown to host exciton bands with non-zero topological Chern integers and chiral exciton edge modes. Using a prototypical two-band Chern insulator model, we calculate a cross-correlation function to obtain the exciton bands and their Chern integers. The lowest exciton band acquires Chern integers such as $\pm 1$ and $\pm 2$ in electronic Chern insulator phase. The non-trivial topology can be experimentally observed both by non-local optoelectronic response of exciton edge modes and by a phase shift in the cross-correlation response d…
We propose to realize and observe Chern Kondo insulators in an optical superlattice with laser-assisted $s$ and $p$ orbital hybridization and synthetic gauge field, which can be engineered based on the recent cold atom experiments. Considering a double-well square optical lattice, the localized $s$ orbitals are decoupled from itinerant $p$ bands and are driven into a Mott insulator due to strong Hubbard interaction. Raman laser beams are then applied to induce tunnelings between $s$ and $p$ orbitals, and generate a staggered flux simultaneously. Due to the strong Hubbard interaction of $s$ orb…
Twisting the stacking of layered materials leads to rich new physics. A three dimensional (3D) topological insulator film host two dimensional gapless Dirac electrons on top and bottom surfaces, which, when the film is below some critical thickness, will hybridize and open a gap in the surface state structure. The hybridization gap can be tuned by various parameters such as film thickness, inversion symmetry, etc. according to the literature. The 3D strong topological insulator Bi(Sb)Se(Te) family have layered structures composed of quintuple layers (QL) stacked together by van der Waals inter…
We consider the resonant Casimir-Polder interaction of an excited alkali-type atom which has a single (electric dipole) transition with a Chern insulator. The Chern insulator has a nonzero, time reversal symmetry breaking Hall conductance, leading to an additional contribution to the resonant Casimir-Polder interaction which depends on the coupling between the Hall conductance and the circular polarization state of the atomic transition. We find that the resonant Casimir-Polder shift can be significantly enhanced for de-excitation frequencies near values associated with the van Hove singularit…
We propose to uncover the topology of a pseudo-Hermitian Chern insulator by quantum quench dynamics. The Bloch Hamiltonian of the pseudo-Hermitian Chern insulator is defined in the basis of the q-deformed Pauli matrices, which are related to the representation of the deformed algebras. We show the bulk-surface duality of the pseudo-Hermitian phases, then further build a concrete relation between the static band topology and quench dynamics, in terms of the time-averaged spin textures. The results are also generalized into a fully nonequilibrium case where the postquench evolution is governed b…
Chern insulator is a building block of many topological quantum matters, ranging from quantum spin Hall insulators to fractional Chern insulators. Here, we discuss a new type of insulator, which consists of two half filled ordinary Chern insulators. On the one hand, the bulk energy spectrum is obtained from folding that of either Chern insulator. Such folding gives rise to a nodal boundary of the Brillouin zone, at which the band crossing is protected by the symmetries of the two-dimensional lattice that is invariant under combined transformations in the spatial and the spin space. It also pro…
The Chern insulator displays a quantized Hall effect without Landau levels. In a landmark paper in 1988, Haldane showed that a Chern insulator could be realized through complex next-nearest-neighbor hopping in a honeycomb lattice. Despite its profound impact on the field of topological physics and recent implementation in cold-atom experiments, the Haldane model has remained elusive in solid-state materials. Here, we report the experimental realization of a Haldane Chern insulator in AB-stacked MoTe2/WSe2 moiré bilayers, which form a honeycomb moiré lattice with two sublattices residing in dif…
We study the edge spectrum of twisted sheets of single layer and bilayer graphene in cases where the continuum model predicts a valley Chern insulator -- an insulating state in which the occupied moiré mini-bands from each valley have a net Chern number, but both valleys together have no net Chern number, as required by time reversal symmetry. In a simple picture, such a state might be expected to have chiral valley polarized counter-propagating edge states. We present results from exact diagonalization of the tight-binding model of commensurate structures in the ribbon geometry. We find that …
A scenario of non-Hermitian bulk--boundary correspondence proposed for one-dimensional topological insulators is adapted to a non-Hermitian Chern insulator to examine its applicability to two-dimensional systems. This scenario employs bulk geometry under a modified periodic boundary condition and boundary geometry under an open boundary condition. The bulk geometry is used to define a topological number, whereas the boundary geometry is used to observe the presence or absence of a topological boundary state. It is demonstrated that the bulk--boundary correspondence holds in a two-dimensional C…
A non-Hermitian Chern insulator with gain/loss-type non-Hermiticity shows a peculiar gap closing; when a nontrivial Chern insulator phase changes to a gapless phase, conduction and valence bands are combined into one band owing to destabilization of chiral edge states. A previous recipe of non-Hermitian bulk-boundary correspondence is insufficient for this system since such a gap closing is beyond its scope. Here, we revise the recipe by taking the peculiar gap closing into account and apply it to the non-Hermitian Chern insulator. We demonstrate that the bulk-boundary correspondence holds in …
We propose a Chern insulator in a two-dimensional electron system with Dresselhaus spin-orbit coupling, ferromagnetism, and spin-dependent effective mass. The analytically-obtained topological phase diagrams show the topological phase transitions induced by tuning the magnetization orientation with the Chern number varying between $1,0,-1$. The magnetization orientation tuning shown here is a more practical way of triggering the topological phase transitions than manipulating the exchange coupling that is no longer tunable after the fabrication of the system. The analytic results are confirmed…
Controlling light propagation using artificial photonic crystals and electromagnetic metamaterials is an important topic in the vibrant field of photonics. Notably, chiral edge states on the surface or at the interface of photonic Chern insulators can be used to make reflection-free waveguides. Here, by both theoretical analysis and electromagnetic simulations, we demonstrate that gyromagnetic hyperbolic metamaterials (GHM) are photonic Chern insulators with superior properties. As a novel mechanism, the simultaneous occurrence of the hyperbolic and gyromagnetic effects in these metamaterials …
We use the Dirac cone model to explore the high Chern number (C) phases that are realized in the magnetic-doped topological insulator (TI) multilayer structures by Zhao et al. [Nature 588, 419 (2020)]. The Chern number is calculated by capturing the evolution of the phase boundaries with the parameters and then the Chern number phase diagrams of the TI multilayer structures are obtained. The high-C behavior is attributed to the band inversion of the renormalized Dirac cones, along with which the spin polarization at the Γpoint will get increased. Moreover, another two TI multilayer structures …
Tunable high-Chern-number Chern insulators in rhombohedral tetralayer graphene/hBN moiré superlattices
State Key Laboratory of Micro-nano Engineering Science, Tsung-Dao Lee lnstitute & School of Physics and Astronomy, Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shanghai Jiao Tong University（上海交通大学微纳电子工程科学国家重点实验室、李政道研究所及物理与天文学院人工结构与量子控制教育部重点实验室）；Department of Physics, City University of Hong Kong（香港城市大学物理系）；Research Center for Electronic and Optical Materials, National Institute for Materials Science（国家材料研究所电子与光学材料研究中心）；Research Center for Materials Nanoarchitectonics, National Institute for Materials Science（国家材料研究所材料纳米结构研究中心）；Hefei National Laboratory（合肥国家实验室）；Shanghai Research Center for Quantum Sciences（上海量子科学研究中心）；Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong)（粤港澳大湾区量子科学中心（广东））；Department of Physics, Southern University of Science and Technology（南方科技大学物理系）；Department of Physics, Hong Kong University of Science and Technology（香港科技大学物理系）
Quantum anomalous Hall (QAH) insulators are two-dimensional (2D) insulating states exhibiting properties similar to those of quantum Hall states but without external magnetic field. They have quantized Hall conductance $σ^H=Ce^2/h$, where integer $C$ is called the Chern number, and represents the number of gapless edge modes. Recent experiments demonstrated that chromium doped thin-film (Bi,Sb)$_2$Te$_3$ is a QAH insulator with Chern number $C=\pm1$. Here we theoretically predict that thin-film topological crystalline insulators (TCI) can host various QAH phases, when doped by ferromagneticall…
The Hofstadter model is a popular choice for theorists investigating the fractional quantum Hall effect on lattices, due to its simplicity, infinite selection of topological flat bands, and increasing applicability to real materials. In particular, fractional Chern insulators in bands with Chern number $|C|>1$ can demonstrate richer physical properties than continuum Landau level states and have recently been detected in experiments. Motivated by this, we examine the stability of fractional Chern insulators with higher Chern number in the Hofstadter model, using large-scale infinite density ma…
Within a relativistic quantum formalism we examine the role of second-order corrections caused by the application of magnetic fields in two-dimensional topological and Chern insulators. This allows to reach analytical expressions for the change of the Berry curvature, orbital magnetic moment, density of states and energy determining their canonical grand potential and transport properties. The present corrections, which become relevant at relatively low fields due to the small gap characterizing these systems, unveil a zero-field diamagnetic susceptibility which can be tuned by the external ma…
We study the possibility of realizing quantum anomalous Hall effect (QAHE) with tunable Chern number through doping magnetic elements in the multi-layer topological insulator film. We find that high Chern number QAHE phases exist in the ideal neutral samples and it can make transition to another QAHE phase directly by means of tuning the exchange field strength or sample thickness. With the help of an extended Haldane model, we demonstrate the physical mechanism of the tunable Chern number QAHE phase. Further, we study the phenomena in the realistic samples with the Fermi energy being gating-m…
We investigate the Hall conductance of a two-dimensional Chern insulator coupled to an environment causing gain and loss. Introducing a biorthogonal linear response theory, we show that sufficiently strong gain and loss lead to a characteristic non-analytical contribution to the Hall conductance. Near its onset, this contribution exhibits a universal power-law with a power 3/2 as a function of Dirac mass, chemical potential and gain strength. Our results pave the way for the study of non-Hermitian topology in electronic transport experiments.
Topological insulators are new states of matter in which the topological phase originates from symmetry breaking. Recently, time-reversal invariant topological insulators were demonstrated for classical wave systems, such as acoustic systems, but limited by inter-pseudo-spin or inter-valley backscattering. This challenge can be effectively overcome via breaking the time-reversal symmetry. Here, we report the first experimental realization of acoustic topological insulators with nonzero Chern numbers, viz., acoustic Chern insulator (ACI), by introducing an angular-momentum-biased resonator arra…
Recent transport experiments have demonstrated that the rhombohedral stacking trilayer graphene is an insulator with an intrinsic gap of 6meV and the Bernal stacking trilayer one is a metal. We propose a Hubbard model with a moderate $U$ for layered graphene sheets, and show that the model well explains the experiments of the stacking dependent energy gap. The on-site Coulomb repulsion drives the metallic phase of the non-interacting system to a weak surface antiferromagnetic insulator for the rhombohedral stacking layers, but does not alter the metallic phase for the Bernal stacking layers.
Motivated by the recent experimental realizations of hyperbolic lattices in circuit quantum electrodynamics and the research interest in the non-Euclidean generalization of topological phenomena, we investigate the Chern insulator phases in a hyperbolic $\{8,3\}$ lattice, which is made from regular octagons ($8$-gons) such that the coordination number of each lattice site is $3$. Based on the conformal projection of the hyperbolic lattice into the Euclidean plane, i.e., the Poincaré disk model, by calculating the Bott index ($B$) and the two-terminal conductance, we reveal two Chern insulator …
Chern insulator ferromagnets are characterized by a quantized anomalous Hall effect, and have so far been identified experimentally in magnetically-doped topological insulator (MTI) thin films and in bilayer graphene moir{é} superlattices. We classify Chern insulator ferromagnets as either spin or orbital, depending on whether the orbital magnetization results from spontaneous spin-polarization combined with spin-orbit interactions, as in the MTI case, or directly from spontaneous orbital currents, as in the moir{é} superlattice case. We argue that in a given magnetic state, characterized for …
The nontrivial band topology can influence the Hofstadter spectrum. We investigate the Hofstadter spectrum for various models of Chern insulators under a rational flux $\frac{ϕ_{0}}{q}$, here $ϕ_{0}=\frac{h}{e}$ and $q$ being an integer. We find two major features. First, the number of splitting subbands is $|q-C|$ with Chern number $C$. Second, the anomalous open-orbit subbands with Chern numbers $q-1$ and $-q-1$ emerge, which are beyond the parameter window $(-q/2,q/2)$ of the Diophantine equation studied by Thouless-Kohmoto-Nightingale-den Nijs [Phys. Rev. Lett. \textbf{49}, 405 (1982)]. Th…
Recently, many numerical evidences of fractional Chern insulator, i.e. the fractional quantum Hall states on lattices, are proposed when a Chern band is partially filled. Some trial wavefunctions of fractional Chern insulators can be obtained by mapping the fractional quantum Hall wavefunctions defined in the continuum onto the lattice through the Wannier state representation (Phys. Rev. Lett. 107, 126803 (2011)) in which the single particle Landau orbits in the Landau levels are identified with the one dimensional Wannier states of the Chern bands with Chern number C = 1. However, this mappin…
Rhombohedral multilayer graphene is a physical realization of the chiral two-dimensional electron gas that can host zero-line modes (ZLMs), also known as kink states, when the local ap opened by inversion symmetry breaking potential changes sign in real space. Here we study how the variations in the local stacking coordination of multilayer graphene affects the formation of the ZLMs. Our analysis indicates that the valley Hall effect develops whenever an interlayer potential difference is able to open up a band gap in stacking faulted multilayer graphene, and that ZLMs can appear at the domain…
Impurities embedded in electronic systems induce bound states which under certain circumstances can hybridize and lead to impurity bands. Doping of insulators with impurities has been identified as a promising route towards engineering electronic topological states of matter. In this paper we show how to realize tuneable Chern insulators starting from a three dimensional topological insulator whose surface is gapped and intentionally doped with magnetic impurities. The main advantage of the protocol is that it is robust, and in particular not very sensitive to the impurity configuration. We ex…
The interplay between band topology and magnetism can give rise to exotic states of matter. For example, magnetically doped topological insulators can realize a Chern insulator that exhibits quantized Hall resistance at zero magnetic field. While prior works have focused on ferromagnetic systems, little is known about band topology and its manipulation in antiferromagnets. Here, we report that MnBi$_2$Te$_4$ is a rare platform for realizing a canted-antiferromagnetic (cAFM) Chern insulator with electrical control. We show that the Chern insulator state with Chern number $C = 1$ appears as soon…
