arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2207.06175physics.optics
收藏

面内照射下单个硅盘中高阶Anapole的实验观察

Experimental observation of higher-order anapoles in individual silicon disks under in-plane illumination

Evelyn Diaz-Escobar, Angela I. Barreda, Amadeu Griol, Alejandro Martinez

摘要:

Anapole状态-其特征在于对远场散射的强烈抑制-由于某些多极矩之间的干涉而自然地出现在高折射率纳米颗粒中。最近,一阶电偶极子,由于电偶极子和环形偶极子之间的干涉,其特征在于在片上光子学要求的面内照明下。在这里,我们更进一步,并报告在面内照明下观察个别硅盘的高阶(磁和二阶电)anapole状态。为了做到这一点,我们增加了磁盘的尺寸(半径和厚度),使这样的anapole发生在电信波长。实验结果表明,在预期的波长和选定的偏振,我们解释为一个签名的高阶anapole在远场散射垂直于磁盘平面的下降。正常和面内激励之间的一些差异进行了讨论,特别是非取消的笛卡尔电和面内入射的环形力矩的总和。我们的研究结果铺平了道路,对使用不同的anapole状态的光子集成电路,无论是在硅或其他高折射率的介电材料。

英文摘要:

Anapole states - characterized by a strong suppression of far-field scattering - naturally arise in high-index nanoparticles as a result of the interference between certain multipolar moments. Recently, the first-order electric anapole, resulting from the interference between the electric and toroidal dipoles, was characterized under in-plane illumination as required in on-chip photonics. Here, we go a step further and report on the observation of higher-order (magnetic and second-order electric) anapole states in individual silicon disks under in-plane illumination. To do so, we increase the disk dimensions (radius and thickness) so that such anapoles occur at telecom wavelengths. Experiments show dips in the far-field scattering perpendicular to the disk plane at the expected wavelengths and the selected polarizations, which we interpret as a signature of high-order anapoles. Some differences between normal and in-plane excitation are discussed, in particular the non-cancellation of the sum of the Cartesian electric and toroidal moments for in-plane incidence. Our results pave the way towards the use of different anapole states in photonic integrated circuits, either on silicon or other high-index dielectric materials.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑