arXivDaily arXiv每日学术速递 周一至周五更新
北美退伍军人节(Veterans Day),12 日无更新
arXiv 2207.02461cond-mat.mes-hall
收藏

狄拉克半金属$Cd_{3}As_{2}$中表面态和体态退耦的证据

Evidence of decoupling of surface and bulk states in Dirac semimetal $Cd_{3}As_{2}$

W. Yu, D. X. Rademacher, N. R. Valdez, M. A. Rodriguez, T. M. Nenoff, W. Pan

摘要:

狄拉克半金属由于其在拓扑量子计算、低能电子学应用以及微波频率范围内的单光子探测等方面的潜在应用而引起了人们极大的兴趣。本文分析了Dirac半金属$Cd_{3}As_{2}$薄片器件在低磁场(B)下的弱反定域行为。在高温下,相位相干长度$l_ϕ$首先随着温度(T)的降低而增加,并且遵循$l_ϕ\propto$ T $^{-0.4}$的幂律依赖性。低于~ 3 K时,$l_ϕ$趋于饱和至~ 180 nm的值。另一个拟合参数$α$与独立的输运通道有关,在T > 3 K时呈现对数温度依赖性,但在低于~ 3 K时也趋于饱和。饱和值约为1.45,非常接近1.5,表明存在三个独立的电子输运通道,我们将其解释为由于顶面和底面以及体相的去耦。这一结果,据我们所知,提供了第一个证据表明,表面和体状态可以成为去耦的狄拉克半金属$Cd_{3}As_{2}$中的电子输运。

英文摘要:

Dirac semimetals have attracted a great deal of current interest due to their potential applications in topological quantum computing, low-energy electronic applications, and single photon detection in the microwave frequency range. Herein are results from analyzing the low magnetic (B) field weak-antilocalization behaviors in a Dirac semimetal $Cd_{3}As_{2}$ thin flake device. At high temperatures, the phase coherence length $l_ϕ$ first increases with decreasing temperature (T) and follows a power law dependence of $l_ϕ\propto$ T$^{-0.4}$. Below ~ 3K, $l_ϕ$ tends to saturate to a value of ~ 180 nm. Another fitting parameter $α$, which is associated with independence transport channels, displays a logarithmic temperature dependence for T > 3K, but also tends to saturate below ~ 3K. The saturation value, ~ 1.45, is very close to 1.5, indicating three independent electron transport channels, which we interpret as due to decoupling of both the top and bottom surfaces as well as the bulk. This result, to our knowledge, provides first evidence that the surfaces and bulk states can become decoupled in electronic transport in Dirac semimetal $Cd_{3}As_{2}$.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑