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arXiv 2206.13698quant-phphysics.app-ph
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通过表面调控实现未掺杂金刚石中的中性硅空位中心

Neutral silicon vacancy centers in undoped diamond via surface control

Zi-Huai Zhang, Josh A. Zuber, Lila V. H. Rodgers, Xin Gui, Paul Stevenson, Minghao Li, Marietta Batzer, Marcel. li Grimau, Brendan Shields, Andrew M. Edmonds, N… 展开作者

Zi-Huai Zhang, Josh A. Zuber, Lila V. H. Rodgers, Xin Gui, Paul Stevenson, Minghao Li, Marietta Batzer, Marcel. li Grimau, Brendan Shields, Andrew M. Edmonds, Nicola Palmer, Matthew L. Markham, Robert J. Cava, Patrick Maletinsky, Nathalie P. de Leon

AI总结:

针对稳定SiV⁰需依赖难获取的高纯度硼掺杂金刚石的问题,研究提出通过低损伤化学处理与氢环境退火调控未掺杂金刚石表面,实现可逆稳定的SiV⁰电荷态调控,为相关可扩展技术及缺陷电荷态工程提供新路径。

摘要:

金刚石中的中性硅空位中心(SiV⁰)因其较长的自旋相干时间以及稳定、狭窄的光学跃迁,是量子网络的极具潜力的候选体系。然而,稳定SiV⁰需要高纯度的硼掺杂金刚石,而这种材料并非易于获取。在此,我们展示了一种通过对金刚石表面进行化学调控的替代方法。我们采用低损伤化学处理工艺,并在氢气环境中进行退火,在未掺杂金刚石中实现了可逆且高度稳定的电荷态调控。所得到的SiV⁰中心表现出光探测磁共振特性以及类体相的光学性质。通过表面终止来调控电荷态,为基于SiV⁰中心的可扩展技术以及其他缺陷的电荷态工程提供了一条可行路径。

英文摘要:

Neutral silicon vacancy centers (SiV0) in diamond are promising candidates for quantum networks because of their long spin coherence times and stable, narrow optical transitions. However, stabilizing SiV0 requires high purity, boron doped diamond, which is not a readily available material. Here, we demonstrate an alternative approach via chemical control of the diamond surface. We use low-damage chemical processing and annealing in a hydrogen environment to realize reversible and highly stable charge state tuning in undoped diamond. The resulting SiV0 centers display optically detected magnetic resonance and bulk-like optical properties. Controlling the charge state tuning via surface termination offers a route for scalable technologies based on SiV0 centers, as well as charge state engineering of other defects.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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