通过层间Dzyaloshinskiii-Moriya相互作用合成反铁磁体的无场自旋轨道转矩开关
Field-free spin orbit torque switching of synthetic antiferromagnet through interlayer Dzyaloshinskii-Moriya interaction
摘要：
超导合成反铁磁体（SAF）是下一代超快、高密度自旋电子存储器和逻辑器件的研究热点。然而，为了通过电流诱导的自旋轨道力矩（SOT）有效地操作它们的磁序，通常需要不利的高外部场来打破对称性。在这里，我们从理论和实验上证明了通过引入层间Dzyaloshinskiii-Moriya相互作用（Dzyaloshinskiii-Moriya interaction），垂直SAF的无场SOT开关。通过宏观自旋模拟，我们发现无场开关的速度随着注入自旋的面内镜像不对称性的增加而增加。我们通过角向反常霍尔测量实验观察到SAF样品中存在层间介电常数。在这样的样品中实现了无场开关，并且有效开关场的强度证明了其起源于层间介电常数。我们的研究结果提供了一个新的战略SAF为基础的高性能SOT器件。
英文摘要：
Perpendicular synthetic antiferromagnets (SAFs) are of interest for the next generation ultrafast, high density spintronic memory and logic devices. However, to energy efficiently operate their magnetic order by current-induced spin orbit torques (SOTs), an unfavored high external field is conventionally required to break the symmetry. Here, we theoretically and experimentally demonstrate the field-free SOT switching of a perpendicular SAF through the introduction of interlayer Dzyaloshinskii-Moriya interaction (DMI). By macro-spin simulation, we show that the speed of field-free switching increases with the in-plane mirror asymmetry of injected spins. We experimentally observe the existence of interlayer DMI in our SAF sample by an azimuthal angular dependent anomalous Hall measurement. Field-free switching is accomplished in such a sample and the strength of the effective switching field demonstrates its origin from interlayer DMI. Our results provide a new strategy for SAF based high performance SOT devices.
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