自旋轨道矩和Dzyaloshinskiii-Moriya相互作用诱导的无场磁化翻转的理论条件
Theoretical Conditions for Field-free Magnetization Switching Induced by Spin-orbit Torque and Dzyaloshinskii-Moriya Interaction
摘要：
最近，研究表明，通过结合自旋轨道矩（SOT）和Dzyaloshinskiii-Moriya相互作用（Dzyaloshinskiii-Moriya interaction）可以实现无场开关。然而，这种机制只发生在某些条件下，尚未得到很好的讨论。在这封信中，它被发现，畴壁宽度与纳米点的直径的比值可以被用来作为判断这种机制的标准。研究了不同的磁性参数，包括交换常数、磁矩大小和类场力矩等对磁性能的影响，揭示了磁畴壁表面能收缩对亚稳态的重要性.我们的工作为DMI诱导的无场磁化翻转实验提供了指导，也为基于SOI的存储器或逻辑电路的设计提供了一种新的方法。
英文摘要：
Recently, it was demonstrated that field-free switching could be achieved by combining spin-orbit torque (SOT) and Dzyaloshinskii-Moriya interaction (DMI). However, this mechanism only occurs under certain conditions which have not been well discussed. In this letter, it is found that the ratio of domain wall width to diameter of nanodots could be utilized as a criteria for judging this mechanism. Influences of different magnetic parameters are studied, including exchange constant, DMI magnitude and field-like toque, etc. Besides, we reveal the importance of the shrinkage of magnetic domain wall surface energy for metastable states. Our work provides guidelines to the experiments on the DMI-induced field-free magnetization switching, and also offers a new way for the design of SOT-based memory or logic circuits.
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