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arXiv 2203.15904physics.ins-dethep-ex
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在低于10 K温度下运行的锗探测器中簇偶极态的证据

Evidence of cluster dipole states in germanium detectors operating at temperatures below 10 K

D. -M. Mei, R. Panth, K. Kooi, H. Mei, S. Bhattarai, M. Raut, P. Acharya, G. -J. Wang

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6 pages and 5 figures
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AI总结：

本文首次证明低于10 K的锗探测器中残余杂质形成的簇偶极态导致电荷俘获，并揭示了电荷俘获对载流子类型和偏压条件的依赖规律。

摘要：

通过研究在低于10 K温度下运行的锗（Ge）探测器中的电荷俘获，我们首次证明残余杂质形成的簇偶极态是电荷俘获的原因。本研究使用了两个具有不同杂质水平和类型的平面探测器。当在较低偏压下使α粒子在探测器顶表面产生的局域电荷载流子漂移穿过探测器时，与在较高偏压下运行相比，观察到显著的电荷俘获。电荷俘获量表现出对电荷载流子类型的强烈依赖性。在p型探测器中，电子比空穴俘获更多，而在n型探测器中，空穴比电子俘获更多。当利用γ射线在探测器内部产生的广泛分布的电荷载流子同时漂移电子和空穴时，电荷俘获量对偏压极性没有依赖性。

英文摘要：

By studying charge trapping in germanium (Ge) detectors operating at temperatures below 10 K, we demonstrate for the first time that the formation of cluster dipole states from residual impurities is responsible for charge trapping. Two planar detectors with different impurity levels and types are used in this study. When drifting the localized charge carriers created by $α$ particles from the top surface across a detector under a lower bias voltage, significant charge trapping is observed when compared to operating at a higher bias voltage. The amount of charge trapping shows a strong dependence on the type of charge carriers. Electrons are trapped more than holes in a p-type detector while holes are trapped more than electrons in a n-type detector. When both electrons and holes are drifted simultaneously using the widespread charge carriers created by $γ$ rays inside the detector, the amount of charge trapping shows no dependence on the polarity of bias voltage.

机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。

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