Mn掺杂\b{eta} - Ga2O3室温铁磁性的退火机制研究
Mechanism-based Tuning of Room-temperature Ferromagnetism in Mn-doped \b{eta}-Ga2O3 by Annealing Atmospher
摘要：
采用聚合物辅助沉积法制备了具有室温铁磁性的Mn掺杂\b{eta} -Ga 2 O3（GMO）薄膜，研究了退火气氛（空气或纯O2）对薄膜结构和物理性能的影响。结果表明，退火气氛对样品中不同价态的空位缺陷浓度、Mn掺杂浓度和晶格常数均有调制作用。值得注意的是，在空气中退火的样品（GMO-air）表现出的饱和磁化强度为纯O2气体中退火的样品（GMO-O2）的170%倍，这可以通过氧空位（VO）控制的铁磁性来定量解释，这是由于VO的离域类氢电子与样品中Mn 2+、Mn 3+和Mn 4+离子的局部磁矩之间建立的束缚磁极化子。我们的研究结果提供了基于机制的RTFM在Ga 2 O3调谐的见解，并可能是有用的设计，制造和相关的自旋电子材料的应用。
英文摘要：
Mn-doped \b{eta}-Ga2O3 (GMO) films with room-temperature ferromagnetism (RTFM) are synthesized by polymer-assisted deposition and the effects of annealing atmosphere (air or pure O2 gas) on their structures and physical properties are investigated. The characterizations show that the concentrations of vacancy defects and Mn dopants in various valence states and lattice constants of the samples are all modulated by the annealing atmosphere. Notably, the samples annealed in air (GMO-air) exhibit a saturation magnetization as strong as 170% times that of the samples annealed in pure O2 gas (GMO-O2), which can be quantitatively explained by oxygen vacancy (VO) controlled ferromagnetism due to bound magnetic polarons established between delocalized hydrogenic electrons of VOs and local magnetic moments of Mn2+, Mn3+, and Mn4+ ions in the samples. Our results provide insights into mechanism-based tuning of RTFM in Ga2O3 and may be useful for design, fabrication, and application of related spintronic materials.
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