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arXiv 2203.07510quant-phcond-mat.stat-mech
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二维浅电路中的测量诱导纠缠跃迁

Measurement induced entanglement transition in two dimensional shallow circuit

Hanchen Liu, Tianci Zhou, Xiao Chen

摘要:

我们制备了由一层两量子位CZ门和几层两量子位随机Clifford门组成的浅电路产生的二维态。在测量了所有的体量子比特后,我们研究了剩余量子比特在一维边界上的纠缠结构。在第一个模型中,我们观察到体X和Z测量之间的竞争可以导致纠缠体积定律相位和解纠缠面积定律相位之间的纠缠相变。我们数值计算的临界指数,并推广到其他量子系统的局部希尔伯特空间维数大于2。在第二个模型中,我们通过改变每层中两个量子比特门的密度来观察纠缠跃迁。我们用随机键伊辛模型解释了由随机Haar门组成的类似浅电路中的这种跃迁。

英文摘要:

We prepare two dimensional states generated by shallow circuits composed of (1) one layer of two-qubit CZ gate or (2) a few layers of two-qubit random Clifford gate. After measuring all of the bulk qubits, we study the entanglement structure of the remaining qubits on the one dimensional boundary. In the first model, we observe that the competition between the bulk X and Z measurements can lead to an entanglement phase transition between an entangled volume law phase and a disentangled area law phase. We numerically evaluate the critical exponents and generalize this idea to other qudit systems with local Hilbert space dimension larger than 2. In the second model, we observe the entanglement transition by varying the density of the two-qubit gate in each layer. We give an interpretation of this transition in terms of random bond Ising model in a similar shallow circuit composed of random Haar gates.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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