应变三层InAs/GaInSb量子阱中的大反向带隙
Large inverted band-gap in strained three-layer InAs/GaInSb quantum wells
摘要：
基于HgTe和三层InAs/GaSb量子阱的量子自旋霍尔绝缘体（QSHIs）具有相当的体带隙，约为10- 18 meV。然而，前者的特点是带隙随温度的消失，而在InAs/GaSb QSHIs的间隙是相当的温度无关。在这里，我们报告的应变三层InAs/GaInSb QWs的大反转带隙的实现。通过对门控霍尔条器件的温度依赖性磁输运测量，我们提取了高达45毫电子伏的间隙。结合本地和非本地的测量，我们属性的边缘电导率观察到的温度高达40 K的拓扑边缘通道的平衡长度为几微米。我们的研究结果铺平了道路，在高温下操纵边缘输运量子阱异质结构。
英文摘要：
Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a band-gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperature-independent.Here, we report on the realization of large inverted band-gap in strained three-layer InAs/GaInSb QWs. By temperature-dependent magnetotransport measurements of gated Hall bar devices, we extract a gap as high as 45 meV. Combining local and non-local measurements, we attribute the edge conductivity observed at temperatures up to 40 K to the topological edge channels with equilibration lengths of a few micrometers. Our findings pave the way toward manipulating edge transport at high temperatures in QW heterostructures.
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