介质上单边微电子倍增器的PIC模拟
PIC Simulations of One-side Multipactor on Dielectric
摘要：
射频介质窗的击穿是粒子加速器和高功率射频源研究的重要课题。射频窗口失效的原因之一是介质表面的次级电子倍增效应。二次电子倍增器可能是导致电介质过热和二次电子发射导致陶瓷中积累的电荷放电的主要原因。在这项研究中，全面的自洽PIC模拟与空间电荷效应进行，以更好地了解动态的单面微电子倍增管的发展和浮动电位的电介质上的发射诱导。本文发现并报道了饱和时的次级电子倍增管参数与介质的二次发射特性以及外加射频场参数之间的重要关系。
英文摘要：
Breakdown of dielectric RF windows is an important issue for particle accelerators and high-power RF sources. One of the generally considered reasons for the RF windows failure is the multipactor on dielectric surface. The multipactor may be responsible for excessive heating of dielectric and discharge of charges that accumulated in ceramic due to secondary emission. In this study the comprehensive self-consistent PIC simulations with space charge effect were performed in order to better understand the dynamic of one-side multipactor development and floating potential on dielectric induced by the emission. The important correlations between the multipactor parameters at saturation and the secondary emission properties of dielectric and the applied RF field parameters were found and are reported in the paper.
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