慢电子-声子弛豫控制超导电阻转变的动力学
Slow electron-phonon relaxation controls the dynamics of the superconducting resistive transition
AI总结：
本文通过TiN薄膜电压涨落测量发现，超导电阻转变中的电阻涨落关联时间由慢电子-声子弛豫及扩散弛豫共同决定，而非传统Ginzburg-Landau时间尺度，结果与自发温度涨落模型定量一致。
摘要：
我们通过薄外延TiN薄膜中的电压涨落测量，研究了超导电阻转变处电阻涨落（$R$-涨落）的时间和空间尺度。该材料的特点是电子-声子弛豫缓慢，这使其远远超出了教科书式超导涨落情形的适用范围。测得的$R$-涨落洛伦兹谱确定了其关联时间，该关联时间在整个转变区域内几乎保持不变，并且与传统的Ginzburg-Landau时间尺度无关。相反，该关联时间与能量弛豫时间一致，而能量弛豫时间由电子-声子弛豫和通过扩散进入库的弛豫共同决定。我们的数据在定量上与自发温度涨落模型一致，并凸显了对具有慢电子-声子弛豫的材料中电阻转变理解的不足。
英文摘要：
We investigate the temporal and spatial scales of resistance fluctuations ($R$-fluctuations) at the superconducting resistive transition accessed through voltage fluctuations measurements in thin epitaxial TiN films. This material is characterized by a slow electron-phonon relaxation, which puts it far beyond the applicability range of the textbook scenario of superconducting fluctuations. The measured Lorentzian spectrum of the $R$-fluctuations identifies their correlation time, which is nearly constant across the transition region and has no relation to the conventional Ginzburg-Landau time scale. Instead, the correlation time coincides with the energy relaxation time determined by a combination of the electron-phonon relaxation and the relaxation via diffusion into reservoirs. Our data is quantitatively consistent with the model of spontaneous temperature fluctuations and highlight the lack of understanding of the resistive transition in materials with slow electron-phonon relaxation.
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