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arXiv 2202.04162cond-mat.mes-hallcond-mat.mtrl-sci
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具有隐藏拓扑相的$α$ -锑烯中的高自旋陈数绝缘体

High Spin-Chern-Number Insulator in $α$-Antimonene with a Hidden Topological Phase

Baokai Wang, Xiaoting Zhou, Yen-Chuan Lin, Hsin Lin, Arun Bansil

摘要:

在研究单层$α$相V族元素的拓扑电子结构时,我们发现了一个新的拓扑相,它在基于拓扑量子化学(TQC)和对称性指示(SI)中是不可见的.由于$α$相As和Sb在高对称点处共享相同的能带表示,因此它们在TQC和SI方面都是平凡的绝缘体。然而,我们证明了As和Sb之间存在拓扑相变,该相变涉及在高对称性$\rm{X}$ - $\rmΓ$ - $\rm{X}$线上的两个$k$ -点处的带隙闭合。在没有自旋轨道耦合(SOC)的情况下,As是平凡的绝缘体,而Sb是狄拉克半金属,具有远离高对称线的四个狄拉克点(DP)。包含$S_z$ -保守的SOC间隙的狄拉克点,并诱导一个非平凡的Berry曲率和驱动器Sb到一个高自旋陈数拓扑相位。$α$的能带结构与Sb的不同之处在于在$Γ$处的能带反转,将Bi转变为Z $_2$拓扑绝缘体。我们的研究表明,量子化自旋霍尔电导率可以作为一个拓扑不变量以外的Z $_2$表征拓扑相。

英文摘要:

In investigating the topological electronic structures of monolayer $α$-phase group V elements, we uncover a new topological phase, which is invisible in the symmetry-based topological quantum chemistry (TQC) as well as symmetry indicators (SIs). Since $α$ phase As and Sb share the same band representations at high-symmetry points, they are both trivial insulators in terms of TQC and SIs. We demonstrate, however, that there is a topological phase transition between As and Sb that involves a band-gap closing at two $k$-points on the high-symmetry $\rm{X}$-$\rmΓ$-$\rm{X}$ line. In the absence of spin-orbit coupling (SOC), As is a trivial insulator, while Sb is a Dirac semimetal with four Dirac points (DPs) located away from the high-symmetry lines. Inclusion of $S_z$-conserved SOC gaps out the Dirac points and induces a nontrivial Berry curvature and drives Sb into a high spin Chern number topological phase. The band structure of $α$-Bi differs from that of Sb by a band inversion at $Γ$, transforming Bi into a Z$_2$ topological insulator. Our study shows that quantized spin Hall conductivity can serve as a topological invariant beyond Z$_2$ for characterizing topological phases.

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