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arXiv 2201.09660cond-mat.mtrl-sciphysics.plasm-ph
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Lennard-Jones晶体的自溅射

Self-Sputtering of the Lennard-Jones Crystal

Nicolas A. Mauchamp, Kazumasa Ikuse, Michiro Isobe, Satoshi Hamaguchi

AI总结:

本研究给出了Lennard-Jones势面心立方(100)晶面的通用自溅射产额曲线,对比了其与金属实验值的吻合范围并解释了高能下的差异,还补充了部分能量下的角度依赖性数据。

摘要:

本文给出了由Lennard-Jones(LJ,伦纳德-琼斯)势相互作用粒子构成的(100)面心立方(fcc)晶体表面的自溅射产额,其为法向入射下归一化入射粒子动能的函数。由于自溅射产额仅取决于归一化入射能量,本文给出的产额曲线是通用曲线,与Lennard-Jones参数无关,因此可作为LJ体系的基础参考数据。研究还将自溅射产额数据与部分金属的实验测得自溅射产额进行了对比,结果显示在以沉积为主的较低离子入射能量下,二者吻合度较好。在更高离子能量下,此类LJ材料的自溅射无法代表真实固体的自溅射行为,这是因为LJ势的排斥相互作用无法代表实际原子在短距离下的排斥作用。本文还给出了部分选定归一化能量下自溅射产额的角度依赖性。

英文摘要:

The self-sputtering yield of the (100) face-centered cubic (fcc) crystal surface consisting of particles interacting with the Lennard-Jones (LJ) potential is presented as a function of the normalized incident particle kinetic energy for normal incidence. Because the self-sputtering yield depends only on the normalized incident energy, the yield curve presented here is the universal curve, independent of the Lennard-Jones parameters, and therefore serves as the fundamental reference data for the LJ system. The self-sputtering yield data are also compared with experimentally obtained self-sputtering yields of some metals, which shows reasonable agreement at relatively low ion incident energy where mostly deposition occurs. At higher ion energy, the self-sputtering of such an LJ material does not represent those of real solids. This is because the repulsive interactions of the LJ potential do not represent those of actual atoms at short distances. The angle dependence of the self-sputtering yield is also presented for some selected normalized energies.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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