Ta掺杂SnO $_2$厚膜和薄膜的电输运性质
Electrical transport properties of thick and thin Ta-doped SnO$_2$ films
摘要：
采用射频溅射法制备了高电导率、高透光率的Ta掺杂SnO $_2$薄膜，并研究了其电输运性质。所有薄膜的电输运性质均表现出简并半导体（金属）特性。对于在纯氩中沉积的厚膜（$t\sim 1\,μ\rm{m}$，其中$t$为厚度），仅用电子-声子散射不能解释其电阻率随温度的变化，应考虑电子-声子散射和电子-杂质散射的干涉效应。对于$t\lesssim 36$纳米薄膜，从$\sim$ 100 K到液氦温度，电导率和霍尔系数都与温度的对数（$\ln T$）呈线性关系. $\ln T$的电导率和霍尔系数的行为不能用Altshuler-Aronov型电子-电子相互作用效应来解释，但可以用粒度存在时的电子-电子相互作用效应来定量解释。我们的结果不仅为电子-声子-杂质干涉效应的理论结果提供了强有力的支持，而且也证实了强耦合区颗粒金属中电荷输运理论预测的正确性.
英文摘要：
Ta-doped SnO$_2$ films with high conductivity and high optical transparency have been successfully fabricated using rf-sputtering method and their electrical transport properties have been investigated. All films reveal degenerate semiconductor (metal) characteristics in electrical transport properties. For the thick films ($t\sim 1\,μ\rm{m}$ with $t$ being the thickness) deposited in pure argon, the electron-phonon scattering alone cannot explain the temperature dependent behaviors of resistivity, the interference effect between electron-phonon and electron-impurity scattering should be considered. For the $t\lesssim 36$ nm films, both conductivity and the Hall coefficient show linear relation with the logarithm of temperature ($\ln T$) from $\sim$100 K down to liquid helium temperature. The $\ln T$ behaviors of conductivity and Hall coefficient cannot be explained by the Altshuler-Aronov type electron-electron interaction effect, but can be quantitatively interpreted by the electron-electron interaction effects in the presence of granularity. Our results not only provide strong supports for the theoretical results on the electron-phonon-impurity interference effect, but also confirm the validity of the theoretical predictions of charge transport in granular metals in strong coupling regime.
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