钯掺杂Bi$_{2}$Te$_{3}$的磁输运与高分辨角分辨光电子能谱研究
Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$
AI总结：
本研究通过磁输运和高分辨ARPES测量，揭示了Pd掺杂对拓扑绝缘体Bi₂Te₃的输运特性、表面态及能带结构的调控规律，并解释了磁输运与能谱测量中费米波矢差异的成因。
摘要：
我们对钯（Pd）掺杂的拓扑绝缘体Pd$_{x}$Bi$_{2}$Te$_{3}$（0 ≤ x ≤ 0.20）单晶开展了磁输运与高分辨角分辨光电子能谱（ARPES）测量。研究发现，本征Bi$_{2}$Te$_{3}$在低温下具有异常高的磁阻（~1500%）和迁移率（~93000 cm$^{2}$V$^{-1}$s$^{-1}$），且二者随Pd掺杂浓度升高而降低。在x=0.05、0.10的样品中检测到Shubnikov-de Haas（SdH）振荡，证实这些样品存在二维拓扑表面态（TSSs）。霍尔测量表明，Pd掺杂使载流子类型从本征Bi$_{2}$Te$_{3}$的n型转变为p型。ARPES测量显示，本征Bi$_{2}$Te$_{3}$的导带穿过费米能级；当Pd掺杂浓度x~0.10以内时，TSSs的狄拉克点和体相价带以类刚带的方式向更低结合能方向移动。结合SdH与ARPES测量得到的参数对比，磁输运测量中kF值的降低很可能源于肖特基势垒诱导的能带弯曲。
英文摘要：
We have performed magneto-transport and high-resolution angle-resolved photoelectron spectroscopy (ARPES) measurements on palladium (Pd) doped topological insulator Pd$_{x}$Bi$_{2}$Te$_{3}$ (0 $\leq$ x $\leq$ 0.20) single crystals. We have observed unusually high values of magnetoresistance ($\sim$ 1500%) and mobility ($\sim$ 93000 cm$^{2}$V$^{-1}$s$^{-1}$) at low temperatures for pristine Bi2Te3 that decrease on Pd doping. The Shubnikov-de Haas (SdH) oscillations have been detected for x = 0.05, 0.10, confirming the presence of 2D topological surface states (TSSs) for these samples. The Hall measurement shows the crossover from n-type charge carriers in pristine Bi$_{2}$Te$_{3}$ to p-type charge carriers upon Pd doping. The ARPES measurements show that the conduction band crosses the Fermi level for pristine Bi$_{2}$Te$_{3}$, and the Dirac point of the TSSs and bulk-derived valence bands indicated shift to lower binding energy upon Pd doping in a rigid-band-like way up to x $\sim$0.10. Based on the comparison of the parameters obtained from the SdH and ARPES measurements, the reduction in the kF value in the magneto-transport measurements likely due to the band bending induced by the Schottky barrier.
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