PtSe $_2$的堆叠多态性对其机电性能的影响
Stacking polymorphism in PtSe$_2$ drastically affects its electromechanical properties
摘要：
PtSe $_2$是下一代压阻式传感器最有前途的材料之一。然而，由于多晶性，大规模合成具有可再现机电性能的均匀薄膜是具有挑战性的。我们表明，堆叠相以外的AA-堆叠在1 T相成为在高温下可利用的。我们发现，这些可以弥补一个显着的分数在多晶薄膜和讨论的方法来表征这些堆叠相。最后，我们估计他们的规范因素，这变化强烈，显着影响纳米机电设备的性能。
英文摘要：
PtSe$_2$ is one of the most promising materials for the next generation of piezoresistive sensors. However, the large-scale synthesis of homogeneous thin films with reproducible electromechanical properties is challenging due to polycrystallinity. We show that stacking phases other than the AA-stacking in the 1T phase become thermodynamically available at elevated temperatures. We show that these can make up a significant fraction in a polycrystalline thin film and discuss methods to characterize these stacking phases. Lastly, we estimate their gauge factors, which vary strongly and significantly impact the performance of a nanoelectromechanical device.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
