基于大面积层状PtSe $_{2}$薄膜的高灵敏度机电压阻压力传感器
Highly sensitive electromechanical piezoresistive pressure sensors based on large-area layered PtSe$_{2}$ films
摘要：
二维（2D）层状材料由于其极薄的厚度，是微纳机电系统（MEMS/NEMS）的理想选择。二硒化铂（PtSe $_{2}$）是一种令人兴奋且尚未开发的2D过渡金属二硫属化物（TMD）材料，特别令人感兴趣，因为其可扩展且低温生长工艺与硅技术兼容。在这里，我们探讨了潜在的薄PtSe $_{2}$膜作为机电压阻传感器。所有的实验都是用在400°C的CMOS兼容温度下通过Pt的热辅助转化生长的半金属PtSe $_{2}$膜进行的。我们报告高负规因子高达-84.8实验获得的PtSe $_{2}$应变片在弯曲悬臂梁设置。集成NEMS压阻式压力传感器与独立的PMMA/PtSe $_{2}$膜证实了负应变系数，并表现出非常高的灵敏度，超过了以前报道的数值的数量级。我们采用密度泛函理论（DFT）计算来理解测量的负规范因子的起源。我们的研究结果表明，PtSe $_{2}$作为一个非常有前途的候选人，未来NEMS的应用，包括集成到CMOS生产线。
英文摘要：
Two-dimensional (2D) layered materials are ideal for micro- and nanoelectromechanical systems (MEMS/NEMS) due to their ultimate thinness. Platinum diselenide (PtSe$_{2}$), an exciting and unexplored 2D transition metal dichalcogenides (TMD) material, is particularly interesting because its scalable and low temperature growth process is compatible with silicon technology. Here, we explore the potential of thin PtSe$_{2}$ films as electromechanical piezoresistive sensors. All experiments have been conducted with semimetallic PtSe$_{2}$ films grown by thermally assisted conversion of Pt at a CMOS-compatible temperature of 400°C. We report high negative gauge factors of up to -84.8 obtained experimentally from PtSe$_{2}$ strain gauges in a bending cantilever beam setup. Integrated NEMS piezoresistive pressure sensors with freestanding PMMA/PtSe$_{2}$ membranes confirm the negative gauge factor and exhibit very high sensitivity, outperforming previously reported values by orders of magnitude. We employ density functional theory (DFT) calculations to understand the origin of the measured negative gauge factor. Our results suggest PtSe$_{2}$ as a very promising candidate for future NEMS applications, including integration into CMOS production lines.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
