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arXiv 2111.01792physics.app-phphysics.optics
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用于硅光子电路的超高灵敏度光功率监测器

Ultrahigh-sensitivity optical power monitor for Si photonic circuits

Takaya Ochiai, Kei Sumita, Shuhei Ohno, Stéphane Monfray, Frederic Boeuf, Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka

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AI总结：

本文提出一种基于InGaAs超薄沟道和硅波导栅极的波导耦合光电晶体管，实现约10^6 A/W的最高响应度，可检测621 fW微弱光，适用于硅光子电路的光功率监测。

摘要：

光电晶体管作为硅光子电路中的光功率监测器具有很大潜力，因为其光电流的内部增益能够实现高灵敏度。然而，目前最先进的波导耦合光电晶体管的响应度低于10^3 A/W，不足以检测极低功率的光。在此，我们提出了一种波导耦合光电晶体管，由硅波导上的InGaAs超薄沟道组成，硅波导作为栅电极以提高响应度。InGaAs超薄沟道下方的硅波导栅极能够在不被栅极金属吸收光的情况下有效控制晶体管电流。结果表明，我们的光电晶体管在波导耦合光电晶体管中实现了约10^6 A/W的最高响应度，使我们能够检测到在硅波导中传播的621 fW的光。高响应度以及约100微秒的合理响应时间使我们的光电晶体管有望成为硅光子电路中有效的光功率监测器。

英文摘要：

A phototransistor is a promising candidate as an optical power monitor in Si photonic circuits since the internal gain of photocurrent enables high sensitivity. However, state-of-the-art waveguide-coupled phototransistors suffer from a responsivity of lower than $10^3$ A/W, which is insufficient for detecting very low power light. Here, we present a waveguide-coupled phototransistor consisting of an InGaAs ultrathin channel on a Si waveguide working as a gate electrode to increase the responsivity. The Si waveguide gate underneath the InGaAs ultrathin channel enables the effective control of transistor current without optical absorption by the gate metal. As a result, our phototransistor achieved the highest responsivity of approximately $10^6$ A/W among the waveguide-coupled phototransistors, allowing us to detect light of 621 fW propagating in the Si waveguide. The high responsivity and the reasonable response time of approximately 100 $μ$s make our phototransistor promising as an effective optical power monitor in Si photonics circuits.

机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。

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