使用原子层沉积减小异质量子器件中的应变
Reducing strain in heterogeneous quantum devices using atomic layer deposition
摘要：
我们研究了使用原子层沉积（ALD）产生的介电层作为一种方法，在复合硅/超导体器件在低温下工作的应变缓解。我们发现，除了ALD层的作用，以减少应变的自旋最接近硅/超导体界面应变最高。我们表明，适当地偏置我们的设备在硅中的铋施主的超精细时钟跃迁，我们可以消除应变展宽，并在这些天然硅器件中添加ALD层留下$T_2$（或时间不均匀性）不变。
英文摘要：
We investigated the use of dielectric layers produced by atomic layer deposition (ALD) as an approach to strain mitigation in composite silicon/superconductor devices operating at cryogenic temperatures. We show that the addition of an ALD layer acts to reduce the strain of spins closest to silicon/superconductor interface where strain is highest. We show that appropriately biasing our devices at the hyperfine clock transition of bismuth donors in silicon, we can remove strain broadening and that the addition of ALD layers left $T_2$ (or temporal inhomogeneities) unchanged in these natural silicon devices.
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