基于全光控忆阻器的存内计算
In-memory computing based on all-optically controlled memristor
AI总结：
本文提出一种Au/ZnO/Pt结构的全光控忆阻器，通过纯电子调谐机制实现忆导的可逆光调控，可用于非易失性神经形态计算和布尔逻辑运算，且无微结构变化，具有高操作稳定性和广阔应用前景。
摘要：
人工智能在日常生活中被广泛应用。然而，由于所谓的冯·诺依曼瓶颈导致的计算效率不足，无法满足快速增长数据的实时处理需求。忆阻存内计算是一种有望实现高效数据处理的候选方案。然而，由于电驱动物质迁移引起的微结构变化，忆阻器的性能存在显著波动。在此，我们提出了一种全光控（AOC）忆阻器，其具有简单的Au/ZnO/Pt三明治结构，基于纯电子调谐的忆导机制。该忆导仅通过不同波长的光照射即可实现可逆调谐。该器件可用于执行存内计算，如非易失性神经形态计算和布尔逻辑功能。此外，我们的AOC忆阻器在工作过程中不涉及微结构变化，展现出优异的操作稳定性。基于这一点及其结构简单性，该器件在下一代计算系统中具有广阔的应用前景。
英文摘要：
Artificial intelligence is widely used in everyday life. However, an insufficient computing efficiency due to the so-called von Neumann bottleneck cannot satisfy the demand for real-time processing of rapidly growing data. Memristive in-memory computing is a promising candidate for highly efficient data processing. However, performance of memristors varies significantly because of microstructure change induced by electric-driven matter migration. Here, we propose an all-optically controlled (AOC) memristor with a simple Au/ZnO/Pt sandwich structure based on a purely electronic tuning mechanism of memconductance. The memconductance can be reversibly tuned only by light irradiation with different wavelengths. The device can be used to perform in-memory computation such as nonvolatile neuromorphic computing and Boolean logic functions. Moreover, no microstructure change is involved during the operation of our AOC memristor which demonstrates superior operation stability. Based on this and its structural simplicity, the device has attractive application prospects for the next generation of computing systems.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
