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arXiv 2108.00879cond-mat.mes-hallquant-ph
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用于可扩展量子计算体系结构的Si/SiGe中的单电子穿梭

Conveyor-mode single-electron shuttling in Si/SiGe for a scalable quantum computing architecture

Inga Seidler, Tom Struck, Ran Xue, Niels Focke, Stefan Trellenkamp, Hendrik Bluhm, Lars R. Schreiber

摘要:

由限制在Si/SiGe量子点中的单电子定义的小自旋量子位寄存器成功地运行,并且连接这些寄存器将允许可扩展的量子计算。在寄存器之间穿梭携带电子的量子位是高保真相干链路的自然选择,前提是控制信号的开销保持适度。我们的原理证明证明了在静电定义的420 nm长的Si/SiGe量子通道中通过传播波势的单个电子的穿梭。这种走廊模式穿梭方法只需要四个正弦控制信号,而与其长度无关。我们讨论的信号参数的调谐,检测的平滑度的电子运动,使映射的潜在的障碍,并观察到一个高的单电子穿梭保真度的$99.42\pm0.02\,\%$,包括方向的逆转。我们的穿梭设备可以很容易地嵌入到Si/SiGe量子位芯片的工业制造中,并为解决完全可扩展的半导体量子计算架构的信号扇出问题铺平了道路。

英文摘要:

Small spin-qubit registers defined by single electrons confined in Si/SiGe quantum dots operate successfully and connecting these would permit scalable quantum computation. Shuttling the qubit carrying electrons between registers is a natural choice for high-fidelity coherent links provided the overhead of control signals stays moderate. Our proof-of-principle demonstrates shuttling of a single electron by a propagating wave-potential in an electrostatically defined 420 nm long Si/SiGe quantum-channel. This conveyor-mode shuttling approach requires independent from its length only four sinusoidal control signals. We discuss the tuning of the signal parameters, detect the smoothness of the electron motion enabling the mapping of potential disorder and observe a high single-electron shuttling fidelity of $99.42\pm0.02\,\%$ including a reversal of direction. Our shuttling device can be readily embedded in industrial fabrication of Si/SiGe qubit chips and paves the way to solving the signal-fanout problem for a fully scalable semiconductor quantum-computing architecture.

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