Cr吸附层对Ni2MnGa（100）电子结构和形貌的影响
Modification of electronic structure and morphology of Ni2MnGa(100) by Cr adlayers
摘要：
本文研究了Cr吸附层在Ni_2MnGa（100）端表面的生长。我们发现形成的岛屿的外延Cr层高达4个原子层的高度，使用扫描隧道显微镜，而核心级的X-射线光电子能谱学（XPS）表明没有任何混合的adlayer和衬底。通过扫描隧道光谱测量的薄Cr层（2.7 ML）的态密度（DOS）与确定其为铁磁的密度泛函理论（DFT）表现出良好的一致性。相反，通过比较XPS价带与DFT计算的体Cr的DOS，表明也在Ni 2 MnGa（100）上外延生长的Cr的厚层是反铁磁的。
英文摘要：
The growth of Cr adlayers on the Mn-Ga terminated surface of Ni2MnGa(100) has been studied in this work. We show formation of islands of epitaxial Cr layer up to 4 atomic layer heights using scanning tunneling microscopy, while core-level x-ray photoelectron spectroscopy (XPS) indicates absence of any intermixing of the adlayer and the substrate. The density of states (DOS) of the thin Cr layer (2.7 ML) measured by scanning tunneling spectroscopy exhibits nice agreement with density functional theory (DFT) that establishes that it is ferromagnetic. In contrast, a thick layer of Cr that also grows epitaxially on Ni2MnGa(100) is shown to be antiferromagnetic by comparing its XPS valence band with the DOS for bulk Cr calculated by DFT.
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