反型GaInP/GaAs三端异质结双极晶体管太阳能电池
Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell
摘要：
在这里，我们提出了一个反三端异质结双极晶体管太阳电池（HBTSC）的GaInP/GaAs制成的实验结果。反向生长和加工使得能够从底部接触中间层（基底），这通过同时降低阴影因子和串联电阻来改善电池性能。有了这个原型，我们表明，一个三端太阳能电池的倒置处理是可行的，并铺平了道路的应用外延剥离，衬底再利用和机械堆叠的HBTSC，最终可以导致一个低成本高效率的III-V-on-Si HBTSC技术。
英文摘要：
Here we present the experimental results of an inverted three-terminal heterojunction bipolar transistor solar cell (HBTSC) made of GaInP/GaAs. The inverted growth and processing enable contacting the intermediate layer (base) from the bottom, which improves the cell performance by reducing shadow factor and series resistance at the same time. With this prototype we show that an inverted processing of a three-terminal solar cell is feasible and pave the way for the application of epitaxial lift-off, substrate reuse and mechanical stacking to the HBTSC which can eventually lead to a low-cost high-efficiency III-V-on-Si HBTSC technology.
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