太赫兹应用中InP/GaAsSb双异质结双极晶体管的性能预测
Performance Prediction of InP/GaAsSb Double Heterojunction Bipolar Transistors for THz applications
摘要：
基于多尺度技术计算机辅助设计（TCAD）建模平台，对InP/GaAsSb双异质结双极晶体管（DHBTs）在THz及THz以上的本征性能进行了预测和分析。二维流体动力学模拟与1-D全波段，原子量子输运计算相结合，揭示了未来的DHBT一代，其尺寸从当前的设备配置开始逐步减小。模拟预测，在具有256 nm的总厚度和37.5 nm的发射极宽度$W_E$的积极缩放的II型DHBT中可以达到约1.6 THz的峰值渡越频率$f_{T,peak}$。相应的击穿电压$BV_{CEO}$估计为2.2 V。调查的角度与两个DHBT性能的限制因素，自热和击穿特性。
英文摘要：
The intrinsic performance of "type-II" InP/GaAsSb double heterojunction bipolar transistors (DHBTs) towards and beyond THz is predicted and analyzed based on a multi-scale technology computer aided design (TCAD) modeling platform calibrated against experimental measurements. Two-dimensional hydrodynamic simulations are combined with 1-D full-band, atomistic quantum transport calculations to shed light on future DHBT generations whose dimensions are decreased step-by-step, starting from the current device configuration. Simulations predict that a peak transit frequency $f_{T,peak}$ of around 1.6 THz could be reached in aggressively scaled type-II DHBTs with a total thickness of 256 nm and an emitter width $W_E$ of 37.5 nm. The corresponding breakdown voltage $BV_{CEO}$ is estimated to be 2.2 V. The investigations are put in perspective with two DHBT performance limiting factors, self-heating and breakdown characteristics.
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