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arXiv 2104.11459cond-mat.mes-hallphysics.app-ph
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自旋-轨道力矩路线图

Roadmap of spin-orbit torques

Qiming Shao, Peng Li, Luqiao Liu, Hyunsoo Yang, Shunsuke Fukami, Armin Razavi, Hao Wu, Kang L. Wang, Frank Freimuth, Yuriy Mokrousov, Mark D. Stiles, Satoru Emo… 展开作者

Qiming Shao, Peng Li, Luqiao Liu, Hyunsoo Yang, Shunsuke Fukami, Armin Razavi, Hao Wu, Kang L. Wang, Frank Freimuth, Yuriy Mokrousov, Mark D. Stiles, Satoru Emori, Axel Hoffmann, Johan Åkerman, Kaushik Roy, Jian-Ping Wang, See-Hun Yang, Kevin Garello, Wei Zhang

摘要:

自旋轨道力矩(SOT)是一种新兴的技术,使自旋电子器件的有效操纵。在SOTs中感兴趣的初始过程涉及电场、自旋轨道耦合、传导电子自旋和磁化。最近的兴趣已经增长到包括各种其他过程,包括声子,磁振子或热。在过去的十年中,已经探索了许多材料以实现更大的SOT效率。近年来,为了最大限度地提高SOT器件的性能而进行的整体设计已经将材料研究从磁性层扩展到磁性层。SOT的快速发展催生了各种基于SOT的应用。在这篇路线图论文中,我们首先回顾了SOT的理论,介绍了各种机制,认为产生或控制SOT,如自旋霍尔效应,Rashba-Edelstein效应,轨道霍尔效应,热梯度,磁振子和应变效应。然后,我们讨论了能够实现这些效应的材料,包括金属、金属合金、拓扑绝缘体、二维材料和复合氧化物。我们还讨论了不同类型的磁性层在SOT器件中的重要作用。之后,我们将讨论利用SOT的器件应用。我们讨论和比较三端和两端SOT磁阻随机存取存储器(MRAM),我们提到各种方案,以消除对外部磁场的需要。我们提供SOT-MRAM的技术应用考虑,并给出基于SOT的神经形态器件和电路的前景。除了SOT-MRAM,我们提出了基于SOT的自旋电子太赫兹发生器,纳米振荡器,畴壁和skyrmion赛道存储器。本文旨在对SOT的理论、材料和应用进行全面的综述,以指导未来SOT在学术界和工业界的发展。

英文摘要:

Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this Roadmap paper, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, two-dimensional materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three-terminal and two-terminal SOT-magnetoresistive random-access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain wall and skyrmion racetrack memories. This paper aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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