通过深反应离子蚀刻（DRIE）降低蚀刻滞后和高纵横比
Reduced etch lag and high aspect ratios by deep reactive ion etching (DRIE)
摘要：
深反应离子蚀刻（DRIE）与博世工艺是用于制造微机电系统和微流控硅应用的微米级结构的关键程序之一，因此，在生物医学研究的小型化越来越重要。在保证高纵横比结构并提供高设计灵活性的同时，蚀刻过程遭受反应离子蚀刻滞后，并且通常依赖于复杂的氧化物掩模来实现深蚀刻。在这项工作中，我们介绍了一个优化的博世工艺，减少蚀刻滞后低于1.5%。此外，我们改进了三步Bosch工艺，允许在高达180微米的深度制造6微米厚的结构，同时保持其稳定性。
英文摘要：
Deep reactive ion etching (DRIE) with the Bosch process is one of the key procedures used to manufacture micron-sized structures for MEMS and microfluidic applications in silicon and, hence, of increasing importance for miniaturization in biomedical research. While guaranteeing high aspect ratio structures and providing high design flexibility, the etching procedure suffers from reactive ion etching lag and often relies on complex oxide masks to enable deep etching. In this work, we introduce an optimized Bosch process that reduces the etch lag to below 1.5 %. Furthermore, we improved a three-step Bosch process, allowing the fabrication of structures with 6 micrometre thickness at depths up to 180 micrometre while maintaining their stability.
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