基于硅基离子的硅（Si）基材料反应离子刻蚀的束流实验
Beam experiments for reactive ion etching of silicon (Si)-based materials by silicon halide ions
浏览论文内容
中文总结 AI 辅助
该研究通过质量选择离子束装置开展束流实验，测定不同离子辐照下Si、SiO2、Si3N4的刻蚀产额，相关数据可用于提升刻蚀工艺和轮廓模拟器的精度。
中文摘要 AI 辅助
采用可在超高真空条件下向样品表面辐照单一物种离子的质量选择离子束装置，在300至1000eV能量范围内，测定了硅离子（Si+）、卤素离子（F+、Cl+、Br+）以及硅基离子（SiF+、SiF3+、SiCl+、SiCl3+、SiBr+、SiBr3+）辐照下，硅（Si）、二氧化硅（SiO2）和氮化硅（Si3N4）的刻蚀产额。1000eV以下的Si+辐照会在Si、SiO2和Si3N4表面沉积硅原子；1000eV以上的三卤化硅离子（SiF3+、SiCl3+、SiBr3+）的刻蚀产额分别大于对应卤素离子的刻蚀产额，且这些刻蚀产额依赖于入射离子能量和刻蚀材料（尤其是Si3N4）；低入射能量下，一卤化硅离子（SiF+、SiCl+、SiBr+）会在衬底上沉积硅，且刻蚀阈值能量依赖于卤素种类。该实验信息有助于构建实验值数据库，以提升刻蚀工艺和轮廓模拟器的精度。
英文摘要
Etching yields of Si, SiO2, and Si3N4 have been determined for silicon ion (Si+), halogen ions (F+, Cl+, and Br+) and silicon halide ions (SiF+, SiF3+, SiCl+, SiCl3+, SiBr+, and SiBr3+) irradiation in 300 to 1000 eV using a mass-selected ion beam apparatus that can irradiate a single species ion to sample surfaces under an ultra-high vacuum condition. Si+ irradiation below 1000eV deposits silicon atoms on Si, SiO2, and Si3N4 surfaces. The etching yields of silicon tri-halide ions (SiF3+, SiCl3+, and SiBr3+) above 1000 eV are larger than those of halogen ions, respectively, and these etching yields depend on the incident ion energy and the etching material (especially Si3N4). At low incident energy, silicon mono-halide ions (SiF+, SiCl+, and SiBr+) deposit silicon on substrates, and the etching threshold energy depends on the halogen species. This information contributes to a database of experimental values needed to increase the precision of an etching process and a profile simulator.
