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arXiv 2103.16986cond-mat.mes-hall
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与介电纳米天线耦合的二维半导体中具有增强量子效率的明亮单光子发射体

Bright single photon emitters with enhanced quantum efficiency in a two-dimensional semiconductor coupled with dielectric nano-antennas

Luca Sortino, Panaiot G. Zotev, Catherine L. Phillips, Alistair J. Brash, Javier Cambiasso, Elena Marensi, A. Mark Fox, Stefan A. Maier, Riccardo Sapienza, Alex… 展开作者

Luca Sortino, Panaiot G. Zotev, Catherine L. Phillips, Alistair J. Brash, Javier Cambiasso, Elena Marensi, A. Mark Fox, Stefan A. Maier, Riccardo Sapienza, Alexander I. Tartakovskii

摘要:

原子级薄半导体中的单光子发射器可以使用由底层纳米结构引起的应变来确定性地定位。在这里,我们将单层WSe $_2$耦合到高折射率磷化镓电介质纳米天线,提供光学增强和单层变形。对于这样的纳米天线上形成的单光子发射器,我们发现非常低(毫微微焦耳)的饱和脉冲能量和高达10 $^4$倍的光致发光比WSe $_2$放置在低折射率的SiO $_2$支柱。我们发现,这些观察的关键是平均增加了5倍的量子效率耦合到纳米天线的发射器。这进一步使我们能够获得新的见解,他们的光致发光动力学,揭示了暗激子水库和俄歇过程的作用。我们还发现,这种发射器的相干时间是有限的固有的退相过程。我们的工作建立了介电纳米天线作为单层半导体中高效量子光产生的平台。

英文摘要:

Single photon emitters in atomically-thin semiconductors can be deterministically positioned using strain induced by underlying nano-structures. Here, we couple monolayer WSe$_2$ to high-refractive-index gallium phosphide dielectric nano-antennas providing both optical enhancement and monolayer deformation. For single photon emitters formed on such nano-antennas, we find very low (femto-Joule) saturation pulse energies and up to 10$^4$ times brighter photoluminescence than in WSe$_2$ placed on low-refractive-index SiO$_2$ pillars. We show that the key to these observations is the increase on average by a factor of 5 in the quantum efficiency of the emitters coupled to the nano-antennas. This further allowed us to gain new insights into their photoluminescence dynamics, revealing the roles of the dark exciton reservoir and Auger processes. We also find that the coherence time of such emitters is limited by intrinsic dephasing processes. Our work establishes dielectric nano-antennas as a platform for high-efficiency quantum light generation in monolayer semiconductors.

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