在光子芯片上直接生长六方氮化硼用于高通量表征
Direct growth of hexagonal boron nitride on photonic chips for high-throughput characterization
摘要：
采用光学显微镜方法对二维材料中的缺陷进行纳米级表征是光子片上器件的重要一步。为了提高分析吞吐量，最近开发了基于波导的片上成像平台。然而，它们固有的缺点是必须将2D材料从生长基底转移到成像芯片，这会引入污染，从而可能改变表征结果。在这里，我们提出了一种独特的方法来规避这些不足，直接生长广泛使用的2D材料（六方氮化硼，hBN）的氮化硅芯片上，并在光学特性的缺陷在完整的生长材料。我们比较了直接生长的方法，标准的湿转移方法，并确认直接生长的明显优势。虽然在目前的工作中使用hBN进行了演示，但该方法很容易扩展到其他2D材料。
英文摘要：
Adapting optical microscopy methods for nanoscale characterization of defects in two-dimensional (2D) materials is a vital step for photonic on-chip devices. To increase the analysis throughput, waveguide-based on-chip imaging platforms have been recently developed. Their inherent disadvantage, however, is the necessity to transfer the 2D material from the growth substrate to the imaging chip which introduces contamination, potentially altering the characterization results. Here we present a unique approach to circumvent these shortfalls by directly growing a widely-used 2D material (hexagonal boron nitride, hBN) on silicon nitride chips, and optically characterizing the defects in the intact as-grown material. We compare the direct growth approach to the standard wet transfer method, and confirm the clear advantages of the direct growth. While demonstrated with hBN in the current work, the method is easily extendable to other 2D materials.
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