Emitted photons stemming from the radiative recombination of electron-hole pairs carry chemical potential in radiative energy converters. This luminescent effect can substantially alter the local net photogeneration in near-field thermophotovoltaic cells. Several assumptions involving the luminescent effect are commonly made in modeling photovoltaic devices; in particular, the photon chemical potential is assumed to be zero or a constant prescribed by the bias voltage. The significance of photon chemical potential depends upon the emitter temperature, the semiconductor properties, and the injection level. Hence, these assumptions are questionable in thermophotovoltaic devices operating in the near-field regime. In the present work, an iterative solver that combines fluctuational electrodynamics with the drift-diffusion model is developed to tackle the coupled photon and charge transport problem, enabling the determination of the spatial profile of photon chemical potential beyond the detailed balance approach. The difference between the results obtained by allowing the photon chemical potential to vary spatially and by assuming a constant value demonstrates the limitations of the conventional approaches. This study is critically important for performance evaluation of near-field thermophotovoltaic systems.
The performance of a near-field thermophotovoltaic system with a tandem-cell structure composed of thin-film p-doped GaSb and n-doped InAs sub-cells on a gold backside reflector is theoretically investigated. The temperatures of the Ga-doped ZnO emitter and the tandem cells are set as 1800 K and 300 K, while the thicknesses of GaSb and InAs sub-cells are considered as 1.5um and 0.5um, respectively. Fluctuational electrodynamics along with the multilayer dyadic Green's function is used to study near-field radiative heat transfer with the consideration of photon chemical potential, whereas radia…
Near-field thermophotovoltaic systems functioning at 400$\sim$900~K based on graphene-hexagonal-boron-nitride heterostructures and thin-film InSb $p$-$n$ junctions are investigated theoretically. The performances of two near-field systems with different emitters are examined carefully. One near-field system consists of a graphene-hexagonal-boron-nitride-graphene sandwich structure as the emitter, while the other system has an emitter made of the double graphene-hexagonal-boron-nitride heterostructure. It is shown that both systems exhibit higher output power density and energy efficiency than …
The thermophotovoltaic cells which convert the low temperature radiation into electricity are of significance due to their potential applications in many fields. In this work, Bi2Te3/Si thermophotovoltaic cells which work under the radiation from the blackbody with the temperature of 300 K-480 K are presented. The experimental results show that the cells can output electricity even under the radiation temperature of 300 K. The band structure of Bi2Te3/Si heterojunctions and the defects in Bi2Te3 thin films lower the conversion efficiency of the cells. It is also demonstrated that the resistivi…
The thermophotovoltaic cells which can convert the infrared radiation from room-temperature surroundings into electricity are of significance due to their potential applications in many fields. In this work, narrow bandgap Bi2Te3/Sb2Te3 thin film thermophotovoltaic cells were fabricated, and the formation mechanism of Bi2Te3/Sb2Te3 p-n heterojunctions was investigated. During the formation of the heterojunctions at room temperature, both electrons and holes diffuse in the same direction from n-type Bi2Te3 thin films to p-type Sb2Te3 thin films rather than conventional bi-directional diffusion.…
Solar energy promises a viable solution to meet the ever-increasing power demand by providing a clean, renewable energy alternative to fossil fuels. For solar thermophotovoltaics (STPV), high-temperature absorbers and emitters with strong spectral selectivity are imperative to efficiently couple solar radiation into photovoltaic cells. Here, we demonstrate refractory metasurfaces for STPV with tailored absorptance and emittance characterized by in-situ high-temperature measurements, featuring thermal stability up to at least 1200 C. Our tungsten-based metasurface absorbers have close-to-unity …
Germanium telluride (GeTe) having a direct bandgap of 0.6 eV has mainly been in phase change memory and thermoelectric power generation. In this article, we study the electronic structure of the GeTe by first-principles calculations. The theoretical direct bandgap of GeTe was found to be 0.69 eV which is very close to the experimental value. Then, we demonstrate a single-junction GeTe thermophotovoltaic (TPV) cell based on device transport model with np structure. The device was optimized for the higher performance of the TPV cell. The GeTe TPV cell exhibited an efficiency of 7.9% with JSC=16.…
Compound semiconductors have been the predominant building blocks for the current mid-infrared thermophotovoltaic devices relevant to sub-2000 K heat conversion and power beaming. However, the prohibitively high cost associated with these technologies limits their broad adoption. Herein, to alleviate this challenge we introduce an all-group IV mid-infrared cell consisting of GeSn alloy directly on a silicon wafer. This emerging class of semiconductors provides strain and composition as degrees of freedom to control the bandgap energy thus covering the entire mid-infrared range. The proposed th…
A standardized method for measuring thermophotovoltaic (TPV) efficiency has not been yet established, which makes the reported results difficult to compare. Besides, most of the TPV efficiencies reported to date have been obtained using small view factors, i.e., large cell-to-emitter distances, so the impact of the series resistance is usually underestimated, and the optical cavity effects, i.e., the multiple reflections taking place between the emitter and the cell, are not accounted for experimentally. In this work, we present an experimental setup able to measure the TPV efficiency under hi…
Graphene---hexagonal-boron-nitride---InSb near-field structures are designed and optimized to enhance the output power and energy efficiency of the thermophotovoltaic systems working in the temperature range of common industrial waste heat, $400~\rm K \sim 800~\rm K$, which is also the working temperature range for conventional thermoelectric devices. We show that the optimal output electric power can reach $3.5\times10^{4} \rm\ W/\rm m^2$ for the system with a graphene---hexagonal-boron-nitride heterostructure emitter and a graphene-covered InSb cell, whereas the best efficiency is achieved b…
Thermophotovoltaic (TPV) energy conversion efficiency has recently surpassed 30%. The key behind such high efficiency is the inclusion of a highly efficient mirror in the rear of the TPV cell that turns back to the thermal emitter the outband energy photons. Efficiencies over 50% could be theoretically attainable by approaching a mirror reflectance of 100%. However, the very few percent of outband absorption significantly deteriorate the conversion efficiency. Thus, current research focuses on developing advance mirror designs able to reach an extreme high outband reflectance over 95%. In this…
Solid-state heat-to-electrical power converters are thermodynamic engines that use fundamental particles, such as electrons or photons, as working fluids. Virtually all commercially available devices are thermoelectric generators, in which electrons flow through a solid driven by a temperature difference. Thermophotovoltaics and thermionics are highly efficient alternatives relying on the direct emission of photons and electrons. However, the low energy flux carried by the emitted particles significantly limits their generated electrical power density potential. Creating nanoscale vacuum gaps …
An indium arsenide photovoltaic cell with gold front contacts is designed for use in a near-field thermophotovoltaic (NF-TPV) device consisting of millimeter-size surfaces separated by a nanosize vacuum gap. The device operates with a doped silicon radiator maintained at a temperature of 800 K. The architecture of the photovoltaic cell, including the emitter and base thicknesses, the doping level of the base, and the front contact grid parameters, are optimized for maximizing NF-TPV power output. This is accomplished by solving radiation and charge transport in the cell via fluctuational elect…
We report the fabrication and measurement of thermophotovoltaic (TPV) cells with efficiencies of >40%, which is a record high TPV efficiency and the first experimental demonstration of the efficiency of high-bandgap tandem TPV cells. TPV efficiency was determined by simultaneous measurement of electric power output and heat dissipation from the device via calorimetry. The TPV cells are two-junction devices comprising high-quality III-V materials with band gaps between 1.0 and 1.4 eV that are optimized for high emitter temperatures of 1900-2400°C. The cells exploit the concept of band-edge spec…
It is well known that performance of a thermophotovoltaic (TPV) device can be enhanced if the vacuum gap between the thermal emitter and the TPV cell becomes nanoscale due to the photon tunneling of evanescent waves. Having multiple bandgaps, multi-junction TPV cells have received attention as an alternative way to improve its performance by selectively absorbing the spectral radiation in each subcell. In this work, we comprehensively analyze the optimized near-field tandem TPV system consisting of the thin-ITO-covered tungsten emitter (at 1500 K) and GaInAsSb/InAs monolithic interconnected ta…
Numerous studies have reported performance enhancement of a thermophotovoltaic (TPV) system when an emitter is separated by nanoscale gaps from a TPV cell. Although a $p$-$n$-junction-based TPV cell has been widely used for the near-field TPV system, a Schottky-junction-based near-field TPV system has drawn attention recently with the advantage of the easy fabrication. However, existing studies mostly focused on the generated photocurrent only in the metal side due to the fact that required energy for the metal-side photocurrent (i.e., Schottky barrier height) is smaller than the bandgap energ…
Recent experimental studies on near-field thermophotovoltaic (TPV) energy conversion have mainly focused on enhancing performance via photon tunneling of evanescent waves. In the sub-micron gap, however, there exist peculiar phenomena caused by the interference of propagating waves, which is seldom observed due to the dramatic increase of the radiation by evanescent waves in full spectrum range. Here, we experimentally demonstrate the oscillatory nature of near-field TPV energy conversion in the far-to-near-field transition regime (250-2600 nm), where evanescent and propagating modes are compa…
We evaluate near-field thermophotovoltaic (TPV) energy conversion systems focusing in particular on their open-circuit voltage (Voc). Unlike previous analyses based largely on numerical simulations with fluctuational electrodynamics, here, we develop an analytic model that captures the physics of near-field TPV systems and can predict their performance metrics. Using our model, we identify two important opportunities of TPV systems operating in the near-field. First, we show analytically that enhancement of radiative recombination is a natural consequence of operating in the near-field. Second…
The conventional notion for achieving high efficiency in thermophotovoltaics (TPVs) is to use a monochromatic emission at a photon energy corresponding to the band gap of the cell. Here, we prove theoretically that such a notion is only accurate under idealized conditions, and further show that when non-radiative recombination is taken into account, efficiency improvement can be achieved by broadening the emission spectrum, due to an enhancement in the open-circuit voltage. Broadening the emission spectrum also improves the electrical power density, by increasing the short-circuit current. To …
Near-field thermal radiation transfer overcoming the far-field blackbody limit has attracted significant attention in recent years owing to its potential for drastically increasing the output power and conversion efficiency of thermophotovoltaic (TPV) power generation systems. Here, we experimentally demonstrate a one-chip near-field TPV device overcoming the far-field blackbody limit, which integrates a 20-um-thick Si emitter and an InGaAs PV cell with a sub-wavelength gap (<140 nm). The device exhibits a photocurrent density of 1.49 A/cm2 at 1192 K, which is 1.5 times larger than the far-fie…
Thermophotonics (TPX) is a technology close to thermophotovoltaics (TPV), where a heated light-emitting diode (LED) is used as the active thermal emitter of the system. It allows to tune the heat flux, by means of electroluminescence, to a spectral range matching better the gap of a photovoltaic cell. The concept is extended to near-field thermophotonics (NF-TPX), where enhanced energy conversion is due to both electric control and wave tunneling. We perform a thorough numerical analysis of a GaAs-based NF-TPX device, by coupling a near-field radiative heat transfer solver based on fluctuation…
Present theories of irreversible energy losses and heat generation within Li-ion cells are unsatisfactory because they are not compatible with energy conservation. This work aims to provide a consistent theoretical treatment of energy transport and losses in such devices. An energy conservation law is derived from the Doyle-Fuller-Newman (DFN) model of a Li-ion cell using a rigorous mathematical approach. The resulting law allows irreversible chemical energy losses to be located to seven different regions of the cell, namely: (i) the electrolyte, (ii) the anode particles, (iii) the cathode par…
Thermal radiation can be substantially enhanced in the near-field scenario due to the tunneling of evanescent waves. The monolayer graphene could play a vital role in this process owning to its strong infrared plasmonic response, however, which still lacks an experimental verification due to the technical challenges. Here, we manage to make a direct measurement about plasmon-mediated thermal radiation between two macroscopic graphene sheets using a custom-made setup. Super-Planckian radiation with efficiency 4.5 times larger than the blackbody limit is observed at a 430-nm vacuum gap on insula…
Solar cells based on kesterite-type $Cu_2ZnSnS_4$ (CZTS) thin films were fabricated using a chemical route to prepare the $CZTS$ films, consisting in sequential deposition of $Cu_2SnS_3$ (CTS) and $ZnS$ thin films followed by annealing at $550^\circ C$ in nitrogen atmosphere. The $CTS$ compound was prepared in a one-step process using a novel chemical procedure consisting of simultaneous precipitation of $Cu_2S$ and $SnS_2$ performed by diffusion membranes assisted $CBD$ (chemical bath deposition) technique. Diffusion membranes were used to optimize the kinetic growth through a moderate contro…
A huge amount of thermal energy is available close to material surfaces in radiative and non-radiative states, which can be useful for matter characterization or for energy devices. One way to harness this near-field energy is to scatter it to the far field. Another way is to bring absorbers close to thermal emitters, and the advent of a full class of novel photonic devices exploiting thermal photons in the near field has been predicted in the last two decades. However, efficient heat-to-electricity conversion of near-field thermal photons, i.e. the seminal building block, could not be achieve…
Halide perovskites perform remarkably in optoelectronic devices including tandem photovoltaics. However, this exceptional performance is striking given that perovskites exhibit deep charge carrier traps and spatial compositional and structural heterogeneity, all of which should be detrimental to performance. Here, we resolve this long-standing paradox by providing a global visualisation of the nanoscale chemical, structural and optoelectronic landscape in halide perovskite devices, made possible through the development of a new suite of correlative, multimodal microscopy measurements combining…
