制备具有相位滑移的无序超导TiN薄膜的稳健氮化技术
A Robust nitridation technique for fabrication of disordered superconducting TiN thin films featuring phase slip events
摘要：
报道了衬底氮化法制备的二维TiN薄膜的电流-电压特性（IVC）中出现的无序诱导相位滑移（PS）现象。在此，Ti/Si 3 N4基金属/基底组件的高温退火是产生伴随TiSi 2和元素Si作为少数相的多数相TiN的关键。该方法本身通过调节由退火温度（Ta）和膜厚度控制的非超导少数相的量来本质上引入不同水平的无序。超导临界温度（Tc）强烈地依赖于Ta，并且对于约12 nm及以上的厚度范围，从所展示的技术获得的最大Tc为约4.8 K。此外，IVC的动力学得到调制的中间电阻台阶的外观减少Ta和步骤变得更加突出的厚度减小。此外，在依赖于温度的临界电流（Ic）从金兹伯格-朗道理论极限的偏差强烈的厚度变化。最后，观察到Tc，中间IVC中的电阻阶跃和退配对电流以与Ta和厚度类似的方式改变，表明制造无序氮化物基超导体的合成过程的稳健性。
英文摘要：
Disorder induced phase slip (PS) events appearing in the current voltage characteristics (IVCs) are reported for two-dimensional TiN thin films produced by a robust substrate mediated nitridation technique. Here, high temperature annealing of Ti/Si3N4 based metal/substrate assembly is the key to produce majority phase TiN accompanied by TiSi2 and elemental Si as minority phases. The method itself introduces different level of disorder intrinsically by tuning the amount of the non-superconducting minority phases that are controlled by annealing temperature (Ta) and the film thickness. The superconducting critical temperature (Tc) strongly depends on Ta and the maximum Tc obtained from the demonstrated technique is about 4.8 K for the thickness range of about 12 nm and above. Besides, the dynamics of IVCs get modulated by the appearance of intermediated resistive steps for decreased Ta and the steps get more prominent for reduced thickness. Further, the deviation in the temperature dependent critical current (Ic) from the Ginzburg-Landau theoretical limit varies strongly with the thickness. Finally, the Tc, intermediate resistive steps in the IVCs and the depairing current are observed to alter in a similar fashion with Ta and the thickness indicating the robustness of the synthesis process to fabricate disordered nitride-based superconductor.
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