硅中实现的拓扑Luttinger半金属相及其表面态
Topological Luttinger semimetallic phase accompanied with surface states realized in silicon
摘要：
通过系统的第一性原理计算和模型分析，研究了体心硅（BC 8-Si）的晶格常数a和内部原子坐标x的完整相图，表明BC 8-Si是一种拓扑Luttinger半金属（LSM），伴随着拓扑非平凡的表面态，并且通过对a和x的微小改变，可以将BC_8-Si的电子性质进一步调谐到正常绝缘体或拓扑狄拉克半金属。这些结果成功地解释了BC 8-Si相互矛盾的输运报告。更重要的是，LSM相中的拓扑表面态填补了拓扑物质与硅之间的空隙，这为拓扑量子器件与硅芯片的集成提供了机会。
英文摘要：
By means of systematically first-principles calculations and model analysis, a complete phase diagram of the body-centered silicon(BC8-Si) via lattice constant a and internal atomic coordinate x is explored, which demonstrates that BC8-Si is a topological Luttinger semimetal(LSM) accompanied with topologically nontrivial surface states, and the electronic properties of BC8-Si can be further tuned to a normal insulator or topological Dirac semimetal by very tiny changing of a and x. These results successfully explain the contradictory transport reports of BC8-Si. More importantly, the topological surface states in the LSM phase fill in the gap between the topological matters and silicon, which provide an opportunity to integrate the topological quantum devices and silicon chips together.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
