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arXiv 2102.11405cond-mat.str-el
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少层拓扑反铁磁体的变磁性

Metamagnetism of few layer topological antiferromagnets

C. Lei, O. Heinonen, A. H. MacDonald, R. J. McQueeney

摘要:

MnBi $_2$ Te $_4$(MBT)是一种很有前途的反铁磁拓扑绝缘体,它的薄膜提供了获得新的和技术上重要的拓扑相的途径,包括量子反常霍尔态和轴子绝缘体。预期MBT器械行为对在施加的磁场中可获得的各种共线和非共线磁相敏感。在这里,我们使用经典的蒙特卡罗模拟和电子结构模型来计算基态磁相图以及拓扑和光学性质的厚度高达六七层的几层膜。使用适当的MBT磁相互作用参数,我们发现,它是可以准备各种不同的磁性堆叠序列,其中一些具有足够的对称性,不允许非互易的光学响应和霍尔传输系数。其他的堆叠安排产生大的法拉第和克尔信号,即使当基态陈数为零。

英文摘要:

MnBi$_2$Te$_4$ (MBT) is a promising antiferromagnetic topological insulator whose films provide access to novel and technologically important topological phases, including quantum anomalous Hall states and axion insulators. MBT device behavior is expected to be sensitive to the various collinear and non-collinear magnetic phases that are accessible in applied magnetic fields. Here, we use classical Monte Carlo simulations and electronic structure models to calculate the ground state magnetic phase diagram as well as topological and optical properties for few layer films with thicknesses up to six septuple layers. Using magnetic interaction parameters appropriate for MBT, we find that it is possible to prepare a variety of different magnetic stacking sequences, some of which have sufficient symmetry to disallow non-reciprocal optical response and Hall transport coefficients. Other stacking arrangements do yield large Faraday and Kerr signals, even when the ground state Chern number vanishes.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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