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arXiv 2102.08108cond-mat.mes-hallphysics.app-ph
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基于自旋波的全加器

Spin Wave Based Full Adder

Abdulqader Mahmoud, Frederic Vanderveken, Florin Ciubotaru, Christoph Adelmann, Sorin Cotofana, Said Hamdioui

摘要:

自旋波(SW)通过磁波导传播并相互干扰而不消耗明显的能量,这为新的超低能量电路设计开辟了道路。在本文中,我们建立在SW功能,并提出了一种新的能源效率的全加法器(FA)的设计组成的FA 1多数和2异或门,其输出和进位分别通过阈值和相位检测产生。我们通过MuMax3微磁模拟验证了我们的建议,并评估和比较其性能与最先进的SW,22 nm CMOS,磁性隧道结(MTJ),自旋霍尔效应(SHE),畴壁运动(DWM),和自旋CMOS实现。我们的评估表明,所提出的SW FA消耗的能量比直接SW门为基础的和22纳米CMOS同行,分别减少22.5%和43%。此外,与最先进的MTJ、SHE、DWM和基于自旋CMOS的FA相比,它的能耗降低了3个数量级以上,并且在面积方面优于竞争对手,因为它需要的芯片面积至少减少了22%。

英文摘要:

Spin Waves (SWs) propagate through magnetic waveguides and interfere with each other without consuming noticeable energy, which opens the road to new ultra-low energy circuit designs. In this paper we build upon SW features and propose a novel energy efficient Full Adder (FA) design consisting of The FA 1 Majority and 2 XOR gates, which outputs Sum and Carry-out are generated by means of threshold and phase detection, respectively. We validate our proposal by means of MuMax3 micromagnetic simulations and we evaluate and compare its performance with state-of-the-art SW, 22nm CMOS, Magnetic Tunnel Junction (MTJ), Spin Hall Effect (SHE), Domain Wall Motion (DWM), and Spin-CMOS implementations. Our evaluation indicates that the proposed SW FA consumes 22.5% and 43% less energy than the direct SW gate based and 22nm CMOS counterparts, respectively. Moreover it exhibits a more than 3 orders of magnitude smaller energy consumption when compared with state-of-the-art MTJ, SHE, DWM, and Spin-CMOS based FAs, and outperforms its contenders in terms of area by requiring at least 22% less chip real-estate.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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