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arXiv 2102.03707cond-mat.mes-hallquant-ph
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Ge Hut线双量子点中的各向异性g因子和自旋轨道场

Anisotropic g-Factor and Spin-Orbit Field in a Ge Hut Wire Double Quantum Dot

Ting Zhang, He Liu, Fei Gao, Gang Xu, Ke Wang, Xin Zhang, Gang Cao, Ting Wang, Jian-Jun Zhang, Xuedong Hu, Hai-Ou Li, Guo-Ping Guo

摘要:

纳米线中的空穴由于其强的自旋-轨道相互作用,在构建Majorana零模和操纵自旋-轨道量子比特中起着重要的作用,近年来引起了人们的广泛关注。在这里,从双点的自旋阻塞机制中的强各向异性漏电流,我们提取了完整的g张量,并发现自旋轨道场与纳米线的轴成59°的方位角。自旋-轨道场的方向表明沿纳米线存在很强的自旋-轨道相互作用,这可能源于Ge hut线中的界面反转不对称性。我们还证明了两种不同的自旋弛豫机制的Ge hut线双点中的空穴:自旋翻转cotunneling的铅,和自旋轨道的双点内的相互作用。这些结果有助于建立基于Ge的量子处理器的可行性。

英文摘要:

Holes in nanowires have drawn significant attention in recent years because of the strong spin-orbit interaction, which plays an important role in constructing Majorana zero modes and manipulating spin-orbit qubits. Here, from the strongly anisotropic leakage current in the spin blockade regime for a double dot, we extract the full g-tensor and find that the spin-orbit field is in plane with an azimuthal angle of 59° to the axis of the nanowire. The direction of the spin-orbit field indicates a strong spin-orbit interaction along the nanowire, which may have originated from the interface inversion asymmetry in Ge hut wires. We also demonstrate two different spin relaxation mechanisms for the holes in the Ge hut wire double dot: spin-flip cotunneling to the leads, and spin-orbit interaction within the double dot. These results help establish feasibility of a Ge-based quantum processor.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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