用$GaN$测定$ZnGeN_2$和$ZnGe_{0.94}Ga_{0.12}N_2$的价带偏移
Experimental determination of the valence band offsets of $ZnGeN_2$ and $ZnGe_{0.94}Ga_{0.12}N_2$ with $GaN$
摘要：
在$ZnGeN_2/GaN$异质界面处具有近似$1.4 eV$价带偏移的预测的II型交错能带对准启发了用于高性能光电子学中的应用的新颖的基于能带工程的$III-N/ZnGeN_2$异质结构的器件设计。我们报告金属有机化学气相沉积生长的$(ZnGe)_{1-x}Ga_{2x}N_2$，$x = 0$和$0.06$，和$GaN$使用X射线光电子能谱之间的价带偏移的测定。发现$ZnGeN_2$的价带位于$GaN$的$1.45-1.65 eV$之上。这一结果与第一性原理密度泛函理论计算的势分布和准粒子自洽GW计算的带边态相对于势的预测值吻合得很好。对于$(ZnGe)_{0.94}Ga_{0.12}N_2$，测定值为$1.29 eV$，$~10-20\%$低于$ZnGeN_2$。$ZnGeN_2$和$GaN$之间的大带偏移的实验测定提供了有前途的替代解决方案，以解决纯III族氮化物基结构和器件所面临的挑战。
英文摘要：
A predicted type-II staggered band alignment with an approximately $1.4 eV$ valence band offset at the $ZnGeN_2/GaN$ heterointerface has inspired novel band-engineered $III-N/ZnGeN_2$ heterostructure-based device designs for applications in high performance optoelectronics. We report on the determination of the valence band offset between metalorganic chemical vapor deposition grown $(ZnGe)_{1-x}Ga_{2x}N_2$, for $x = 0$ and $0.06$, and $GaN$ using X-ray photoemission spectroscopy. The valence band of $ZnGeN_2$ was found to lie $1.45-1.65 eV$ above that of $GaN$. This result agrees well with the value predicted by first-principles density functional theory calculations using the local density approximation for the potential profile and quasiparticle self-consistent GW calculations of the band edge states relative to the potential. For $(ZnGe)_{0.94}Ga_{0.12}N_2$ the value was determined to be $1.29 eV$, $~10-20\%$ lower than that of $ZnGeN_2$. The experimental determination of the large band offset between $ZnGeN_2$ and $GaN$ provides promising alternative solutions to address challenges faced with pure III-nitride-based structures and devices.
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